IRFP4768PBF vs IRFP4368PBF

This in-depth comparison of the IRFP4768PBF and IRFP4368PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFP4768PBF

Infineon Technologies

Lifecycle: Active
Stock: 7193 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRFP4368PBF

International Rectifier

Lifecycle: Active
Stock: 2190 PCS
Package: TO-247
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFP4768PBF	IRFP4368PBF
Series	HEXFET®	HEXFET®
Part Status	Last Time Buy	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V	75 V
Current - Continuous Drain(Id) @ 25°C	-	195A (Tc)
Drive Voltage(Max Rds On Min Rds On)	-	10V
Rds On(Max) @ Id Vgs	-	1.85mOhm @ 195A, 10V
Vgs(th)(Max) @ Id	-	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	570 nC @ 10 V
Vgs(Max)	-	±20V
Input Capacitance(Ciss)(Max) @ Vds	-	19230 pF @ 50 V
Power Dissipation (Max)	520W (Tc)	520W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole
Base Product Number	IRFP4768	-
Current - Continuous Drain (Id) @ 25°C	93A (Tc)	-
Drive Voltage (Max Rds On, Min Rds On)	10V	-
Rds On (Max) @ Id, Vgs	17.5mOhm @ 56A, 10V	-
Vgs(th) (Max) @ Id	5V @ 250µA	-
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V	-
Vgs (Max)	±20V	-
Input Capacitance (Ciss) (Max) @ Vds	10880 pF @ 50 V	-
Packaging	Tube	-

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