IRLML2502TRPBF vs IRLML5203

This in-depth comparison of the IRLML2502TRPBF and IRLML5203 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRLML2502TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 1725 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRLML5203

Infineon Technologies

Lifecycle: Active
Stock: 6689 PCS
Package: SOT-23
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRLML2502TRPBF	IRLML5203
Series	HEXFET®	HEXFET®
Part Status	Last Time Buy	Obsolete
FET Type	N-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	30 V
Current - Continuous Drain(Id) @ 25°C	-	3A (Ta)
Drive Voltage(Max Rds On Min Rds On)	-	4.5V, 10V
Rds On(Max) @ Id Vgs	-	98mOhm @ 3A, 10V
Vgs(th)(Max) @ Id	-	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	14 nC @ 10 V
Vgs(Max)	-	±20V
Input Capacitance(Ciss)(Max) @ Vds	-	510 pF @ 25 V
Power Dissipation (Max)	1.25W (Ta)	1.25W (Ta)
Mounting Type	Surface Mount	Surface Mount
Base Product Number	IRLML2502	-
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	-
Rds On (Max) @ Id, Vgs	45mOhm @ 4.2A, 4.5V	-
Vgs(th) (Max) @ Id	1.2V @ 250µA	-
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 5 V	-
Vgs (Max)	±12V	-
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 15 V	-
Operating Temperature	-55°C ~ 150°C (TJ)	-
Packaging	Cut Tape (CT), Tape & Reel (TR)	-

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