IRLML2803TRPBF vs IRLML2502TRPBF Comparison

This in-depth comparison of the IRLML2502TRPBF and IRLML2803TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRLML2502TRPBF

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1725 PCS | Infineon Technologies
IRLML2803TRPBF

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3918 PCS | Infineon Technologies
Package SOT-23
Description MOSFET N-CH 20V 4.2A SOT23 MOSFET N-CH 30V 1.2A SOT23
Series HEXFET® HEXFET®
Part Status Last Time Buy Active
Base Product Number IRLML2502 -
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 45mOhm @ 4.2A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 15 V -
Power Dissipation (Max) 1.25W (Ta) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 1.2A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 250mOhm @ 910mA, 10V
Vgs(th)(Max) @ Id - 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 5 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 85 pF @ 25 V
Comparison Model : IRLML2502TRPBF IRLML2803TRPBF

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