IRLML6302TRPBF vs IRLML5103TRPBF Comparison
This in-depth comparison of the IRLML6302TRPBF and IRLML5103TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOT-23-3
Description
MOSFET P-CH 20V 780MA SOT23
MOSFET P-CH 30V 760MA SOT23
Series
HEXFET®
HEXFET®
Part Status
Obsolete
Active
FET Type
P-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
30 V
Current - Continuous Drain(Id) @ 25°C
-
760mA (Ta)
Drive Voltage(Max Rds On Min Rds On)
-
4.5V, 10V
Rds On(Max) @ Id Vgs
-
600mOhm @ 600mA, 10V
Vgs(th)(Max) @ Id
-
1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
5.1 nC @ 10 V
Vgs(Max)
-
±20V
Input Capacitance(Ciss)(Max) @ Vds
-
75 pF @ 25 V
Power Dissipation (Max)
540mW (Ta)
540mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
IRLML6302
-
Current - Continuous Drain (Id) @ 25°C
780mA (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
-
Rds On (Max) @ Id, Vgs
600mOhm @ 610mA, 4.5V
-
Vgs(th) (Max) @ Id
1.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
3.6 nC @ 4.45 V
-
Vgs (Max)
±12V
-
Input Capacitance (Ciss) (Max) @ Vds
97 pF @ 15 V
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
