IRLML6302TRPBF vs IRLML5203TRPBF

This in-depth comparison of the IRLML6302TRPBF and IRLML5203TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRLML6302TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 5057 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRLML5203TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 4490 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRLML6302TRPBF	IRLML5203TRPBF
Series	HEXFET®	HEXFET®
Part Status	Obsolete	Last Time Buy
Base Product Number	IRLML6302	IRLML5203
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	30 V
Current - Continuous Drain (Id) @ 25°C	780mA (Ta)	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V	4.5V, 10V
Rds On (Max) @ Id, Vgs	600mOhm @ 610mA, 4.5V	98mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.6 nC @ 4.45 V	14 nC @ 10 V
Vgs (Max)	±12V	±20V
Input Capacitance (Ciss) (Max) @ Vds	97 pF @ 15 V	510 pF @ 25 V
Power Dissipation (Max)	540mW (Ta)	1.25W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Packaging	Cut Tape (CT), Tape & Reel (TR)	Cut Tape (CT), Tape & Reel (TR)

Compare RFQ