IRLML6346TRPBF vs IRLML6401TRPBF Comparison
This in-depth comparison of the IRLML6401TRPBF and IRLML6346TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOT-23
Description
MOSFET P-CH 12V 4.3A SOT23
MOSFET N-CH 30V 3.4A SOT23
Series
HEXFET®
HEXFET®
Part Status
Last Time Buy
Active
Base Product Number
IRLML6401
-
FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
30 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
-
Rds On (Max) @ Id, Vgs
50mOhm @ 4.3A, 4.5V
-
Vgs(th) (Max) @ Id
950mV @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V
-
Vgs (Max)
±8V
-
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 10 V
-
Power Dissipation (Max)
1.3W (Ta)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
Current - Continuous Drain(Id) @ 25°C
-
3.4A (Ta)
Drive Voltage(Max Rds On Min Rds On)
-
2.5V, 4.5V
Rds On(Max) @ Id Vgs
-
63mOhm @ 3.4A, 4.5V
Vgs(th)(Max) @ Id
-
1.1V @ 10µA
Gate Charge(Qg)(Max) @ Vgs
-
2.9 nC @ 4.5 V
Vgs(Max)
-
±12V
Input Capacitance(Ciss)(Max) @ Vds
-
270 pF @ 24 V
