IRLML6401TRPBF vs IRLML0100TRPBF

This in-depth comparison of the IRLML6401TRPBF and IRLML0100TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRLML6401TRPBF

Infineon Technologies

Lifecycle
Active
Stock
6783 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
+BOM RFQ
Part B

IRLML0100TRPBF

Infineon Technologies

Lifecycle
Active
Stock
2453 PCS
Package
SOT-23
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRLML6401TRPBF IRLML0100TRPBF
Series HEXFET® HEXFET®
Part Status Last Time Buy Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 100 V
Current - Continuous Drain(Id) @ 25°C - 1.6A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 220mOhm @ 1.6A, 10V
Vgs(th)(Max) @ Id - 2.5V @ 25µA
Gate Charge(Qg)(Max) @ Vgs - 2.5 nC @ 4.5 V
Vgs(Max) - ±16V
Input Capacitance(Ciss)(Max) @ Vds - 290 pF @ 25 V
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number IRLML6401 -
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs 50mOhm @ 4.3A, 4.5V -
Vgs(th) (Max) @ Id 950mV @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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