IRLML6402TRPBF vs IRLML6401TRPBF

This in-depth comparison of the IRLML6402TRPBF and IRLML6401TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRLML6402TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 3910 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRLML6401TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 6783 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRLML6402TRPBF	IRLML6401TRPBF
Series	HEXFET®	HEXFET®
Part Status	Last Time Buy	Last Time Buy
Base Product Number	IRLML6402	IRLML6401
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	12 V
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta)	4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	65mOhm @ 3.7A, 4.5V	50mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 5 V	15 nC @ 5 V
Vgs (Max)	±12V	±8V
Input Capacitance (Ciss) (Max) @ Vds	633 pF @ 10 V	830 pF @ 10 V
Power Dissipation (Max)	1.3W (Ta)	1.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Packaging	Cut Tape (CT), Tape & Reel (TR)	Cut Tape (CT), Tape & Reel (TR)

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