IXDN604SITR vs IXDN602SITR Comparison
This in-depth comparison of the IXDN604SITR and IXDN602SITR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC-8
SOIC-8
Description
IC GATE DRVR LOW-SIDE 8SOIC
IC GATE DRVR LOW-SIDE 8SOIC
Part Status
Active
Active
Driven Configuration
Low-Side
Low-Side
Channel Type
Independent
Independent
Number of Drivers
2
2
Gate Type
IGBT, N-Channel, P-Channel MOSFET
IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply
4.5V ~ 35V
4.5V ~ 35V
Logic Voltage - VILVIH
0.8V, 3V
0.8V, 3V
Current - Peak Output(Source Sink)
4A, 4A
2A, 2A
Input Type
Non-Inverting
Non-Inverting
Rise / Fall Time(Typ)
9ns, 8ns
7.5ns, 6.5ns
Operating Temperature
-40°C ~ 125°C (TA)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
