IXDN609PI vs IXDN602PI
This in-depth comparison of the IXDN609PI and IXDN602PI provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
DIP-8
DIP-8
Description
IC GATE DRVR LOW-SIDE 8DIP
IC GATE DRVR LOW-SIDE 8DIP
ProductStatus
Active
Active
DrivenConfiguration
Low-Side
Low-Side
ChannelType
Single
Independent
NumberofDrivers
1
2
GateType
IGBT, N-Channel, P-Channel MOSFET
IGBT, N-Channel, P-Channel MOSFET
Voltage-Supply
4.5V ~ 35V
4.5V ~ 35V
LogicVoltage-VILVIH
0.8V, 3V
0.8V, 3V
Current-PeakOutput(SourceSink)
9A, 9A
2A, 2A
InputType
Non-Inverting
Non-Inverting
Rise/FallTime(Typ)
22ns, 15ns
7.5ns, 6.5ns
OperatingTemperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
MountingType
Through Hole
Through Hole
