LM311DR vs LM311DR2 Comparison

This in-depth comparison of the LM311DR and LM311DR2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
LM311DR

+BOM

4713 PCS | Texas Instruments
LM311DR2

+BOM

6545 PCS | onsemi
Package SOIC-8
Description IC DIFF COMP STROBE 8-SOIC IC COMPARATOR SGL HI VOLT 8SOIC
Supplier - onsemi,Rochester Electronics, LLC
ProductStatus Active Obsolete
Type General Purpose -
NumberofElements 1 -
OutputType MOS, Open-Collector, Open-Emitter, TTL -
Voltage-SupplySingle/Dual(±) 3.5V ~ 30V, ±1.75V ~ 15V -
Voltage-InputOffset(Max) 7.5mV @ ±15V -
Current-InputBias(Max) 0.25µA @ ±15V -
Current-Quiescent(Max) 7.5mA -
OperatingTemperature 0°C ~ 70°C -
MountingType Surface Mount -
Comparison Model : LM311DR LM311DR2

+BOM RFQ