MC33152DR2G vs MC33151DG Comparison

This in-depth comparison of the MC33152DR2G and MC33151DG provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
MC33152DR2G

+BOM

6426 PCS | onsemi
MC33151DG

+BOM

9003 PCS | onsemi
Package SOIC-8 SOIC-8
Description IC GATE DRVR LOW-SIDE 8SOIC MC33151 - HIGH SPEED DUAL MOSFET
Part Status Active Active
Driven Configuration Low-Side -
Channel Type Independent -
Number of Drivers 2 -
Gate Type N-Channel MOSFET -
Voltage - Supply 6.1V ~ 18V -
Logic Voltage - VILVIH 0.8V, 2.6V -
Current - Peak Output(Source Sink) 1.5A, 1.5A -
Input Type Non-Inverting -
Rise / Fall Time(Typ) 36ns, 32ns -
Operating Temperature -40°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Comparison Model : MC33152DR2G MC33151DG

+BOM RFQ