MC33151DR2G vs MC33171DR2G

This in-depth comparison of the MC33151DR2G and MC33171DR2G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MC33151DR2G

onsemi

Lifecycle: Active
Stock: 6915 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

Part B

MC33171DR2G

onsemi

Lifecycle: Active
Stock: 2683 PCS
Package: SOIC-8
Series: Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	MC33151DR2G	MC33171DR2G
Part Status	Active	Active
Driven Configuration	Low-Side	-
Channel Type	Independent	-
Number of Drivers	2	-
Gate Type	N-Channel MOSFET	-
Voltage - Supply	6.5V ~ 18V	-
Logic Voltage - VILVIH	0.8V, 2.6V	-
Current - Peak Output(Source Sink)	1.5A, 1.5A	-
Input Type	Inverting	-
Rise / Fall Time(Typ)	31ns, 32ns	-
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 85°C
Mounting Type	Surface Mount	Surface Mount
Amplifier Type	-	General Purpose
Number of Circuits	-	1
Slew Rate	-	2.1V/µs
Gain Bandwidth Product	-	1.8 MHz
Current - Input Bias	-	20 nA
Voltage - Input Offset	-	2 mV
Supply Current	-	220µA
Current - Output / Channel	-	27 mA
Voltage - Supply Span(Min)	-	3 V
Voltage - Supply Span(Max)	-	44 V

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