MC33172DR2G vs MC33152VDR2 Comparison

This in-depth comparison of the MC33172DR2G and MC33152VDR2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
MC33172DR2G

+BOM

1211 PCS | onsemi
MC33152VDR2

+BOM

5641 PCS | onsemi
Package SOIC-8
Description IC GATE DRVR LOW-SIDE 8SOIC
Part Status Active Obsolete
Driven Configuration - Low-Side
Channel Type - Independent
Number of Drivers - 2
Gate Type - N-Channel MOSFET
Voltage - Supply - 6.1V ~ 18V
Logic Voltage - VILVIH - 0.8V, 2.6V
Current - Peak Output(Source Sink) - 1.5A, 1.5A
Input Type - Non-Inverting
Rise / Fall Time(Typ) - 36ns, 32ns
Operating Temperature -40°C ~ 85°C -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Amplifier Type General Purpose -
Number of Circuits 2 -
Slew Rate 2.1V/µs -
Gain Bandwidth Product 1.8 MHz -
Current - Input Bias 20 nA -
Voltage - Input Offset 2 mV -
Supply Current 220µA (x2 Channels) -
Current - Output / Channel 27 mA -
Voltage - Supply Span(Min) 3 V -
Voltage - Supply Span(Max) 44 V -
Comparison Model : MC33172DR2G MC33152VDR2

+BOM RFQ