MC34152DR2G vs MC34129DR2

This in-depth comparison of the MC34152DR2G and MC34129DR2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MC34152DR2G

onsemi

Lifecycle
Active
Stock
2681 PCS
Package
SOIC-8
Series
PMIC - Gate Drivers
+BOM RFQ
Part B

MC34129DR2

NXP USA Inc.

Lifecycle
Active
Stock
5367 PCS
Package
SOIC-14
Series
PMIC - Power Management - Specialized
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MC34152DR2G MC34129DR2
Part Status Active Obsolete
Applications - Telecommunications
Supply Current - 2.5mA
Voltage - Supply 6.1V ~ 18V 4V ~ 12V
Operating Temperature 0°C ~ 150°C (TJ) 0°C ~ 70°C
Mounting Type Surface Mount Surface Mount
Driven Configuration Low-Side -
Channel Type Independent -
Number of Drivers 2 -
Gate Type N-Channel MOSFET -
Logic Voltage - VILVIH 0.8V, 2.6V -
Current - Peak Output(Source Sink) 1.5A, 1.5A -
Input Type Non-Inverting -
Rise / Fall Time(Typ) 36ns, 32ns -
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