MC34152DR2G vs MC34129EF

This in-depth comparison of the MC34152DR2G and MC34129EF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
MC34152DR2G

+BOM

2681 PCS | onsemi
MC34129EF

+BOM

7432 PCS | NXP USA Inc.
Package SOIC-8 14-SOIC (0.154", 3.90mm Width)
Description IC GATE DRVR LOW-SIDE 8SOIC IC CTLR CURRENT MODE 14-SOIC
ProductStatus Active Obsolete
Applications - Telecommunications
Current-Supply - 2.5mA
Voltage-Supply 6.1V ~ 18V 4V ~ 12V
OperatingTemperature 0°C ~ 150°C (TJ) 0°C ~ 70°C
MountingType Surface Mount Surface Mount
DrivenConfiguration Low-Side -
ChannelType Independent -
NumberofDrivers 2 -
GateType N-Channel MOSFET -
LogicVoltage-VILVIH 0.8V, 2.6V -
Current-PeakOutput(SourceSink) 1.5A, 1.5A -
InputType Non-Inverting -
Rise/FallTime(Typ) 36ns, 32ns -
Comparison Model : MC34152DR2G MC34129EF

+BOM RFQ