NCP5181DR2G vs NCP5111DR2G

This in-depth comparison of the NCP5181DR2G and NCP5111DR2G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

NCP5181DR2G

onsemi

Lifecycle: Active
Stock: 4243 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

Part B

NCP5111DR2G

onsemi

Lifecycle: Active
Stock: 2937 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	NCP5181DR2G	NCP5111DR2G
Part Status	Last Time Buy	Active
Driven Configuration	Half-Bridge	Half-Bridge
Channel Type	Independent	Synchronous
Number of Drivers	2	2
Gate Type	N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V	10V ~ 20V
Logic Voltage - VILVIH	0.8V, 2.3V	0.8V, 2.3V
Current - Peak Output(Source Sink)	1.4A, 2.2A	250mA, 500mA
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	600 V
Rise / Fall Time(Typ)	40ns, 20ns	85ns, 35ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare RFQ