NCP5181DR2G vs NCP51145PDR2G

This in-depth comparison of the NCP5181DR2G and NCP51145PDR2G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

NCP5181DR2G

onsemi

Lifecycle: Active
Stock: 4243 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

Part B

NCP51145PDR2G

onsemi

Lifecycle: Active
Stock: 2518 PCS
Package: SOIC-8
Series: PMIC - Voltage Regulators - Special Purpose

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	NCP5181DR2G	NCP51145PDR2G
Part Status	Last Time Buy	Obsolete
Applications	-	LDO (Linear), DDR
Voltage - Input	-	1V ~ 5.5V
Number of Outputs	-	1
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 85°C
Mounting Type	Surface Mount	Surface Mount
Driven Configuration	Half-Bridge	-
Channel Type	Independent	-
Number of Drivers	2	-
Gate Type	N-Channel MOSFET	-
Voltage - Supply	10V ~ 20V	-
Logic Voltage - VILVIH	0.8V, 2.3V	-
Current - Peak Output(Source Sink)	1.4A, 2.2A	-
Input Type	Non-Inverting	-
High Side Voltage - Max(Bootstrap)	600 V	-
Rise / Fall Time(Typ)	40ns, 20ns	-

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