STD10NM60N vs STD10N60M2

This in-depth comparison of the STD10N60M2 and STD10NM60N provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
STD10N60M2

+BOM

3159 PCS | STMicroelectronics
STD10NM60N

+BOM

4240 PCS | STMicroelectronics
Package TO-252-3 TO-252-3
Description MOSFET N-CH 600V 7.5A DPAK MOSFET N-CH 600V 10A DPAK
Series MDmesh™ II Plus MDmesh™ II
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V 600 V
Current-ContinuousDrain(Id)@25°C 7.5A (Tc) 10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 600mOhm @ 3A, 10V 550mOhm @ 4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 13.5 nC @ 10 V 19 nC @ 10 V
Vgs(Max) ±25V ±25V
InputCapacitance(Ciss)(Max)@Vds 400 pF @ 100 V 540 pF @ 50 V
PowerDissipation(Max) 85W (Tc) 70W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Comparison Model : STD10N60M2 STD10NM60N

+BOM RFQ