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STD10NM60N
+BOMMOSFET N-CH 600V 10A DPAK
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ManufacturerSTMicroelectronics
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Mfr. Part #STD10NM60N
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Datasheet STD10NM60N DataSheet
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Package TO-252-3
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In Stock4240
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 550mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 540 pF @ 50 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Overview
Description
The STD10NM60N is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It belongs to the N-channel enhancement-mode category and is part of the MDmesh™ series, which is known for its high efficiency and fast switching capabilities.
Key features of the STD10NM60N include:
1. Voltage and Current Ratings: It is designed to handle a drain-source voltage (V_DS) of up to 600 volts and a continuous drain current (I_D) of up to 10 amperes.
2. Low On-Resistance: This MOSFET offers a low on-state resistance (R_DS(on)), which reduces power loss and enhances overall efficiency.
3. Fast Switching: The device is optimized for fast switching speeds, making it suitable for high-frequency applications.
4. Applications: It is typically used in power supplies, motor drivers, lighting, and other high-power electronic applications.
The STD10NM60N offers reliability and efficiency, making it a popular choice in the design of energy-efficient electronic systems.
Key features of the STD10NM60N include:
1. Voltage and Current Ratings: It is designed to handle a drain-source voltage (V_DS) of up to 600 volts and a continuous drain current (I_D) of up to 10 amperes.
2. Low On-Resistance: This MOSFET offers a low on-state resistance (R_DS(on)), which reduces power loss and enhances overall efficiency.
3. Fast Switching: The device is optimized for fast switching speeds, making it suitable for high-frequency applications.
4. Applications: It is typically used in power supplies, motor drivers, lighting, and other high-power electronic applications.
The STD10NM60N offers reliability and efficiency, making it a popular choice in the design of energy-efficient electronic systems.
Equivalent
The STD10NM60N is a 600V, 10A N-channel MOSFET. Equivalent products include:
1. IRF640 - by International Rectifier
2. STP10NK60Z - by STMicroelectronics
3. FCPF13N60 - by Fairchild Semiconductor
4. AOT10N60 - by Alpha & Omega Semiconductor
Ensure compatibility with specific circuit requirements before substitution, as there might be differences in performance parameters.
1. IRF640 - by International Rectifier
2. STP10NK60Z - by STMicroelectronics
3. FCPF13N60 - by Fairchild Semiconductor
4. AOT10N60 - by Alpha & Omega Semiconductor
Ensure compatibility with specific circuit requirements before substitution, as there might be differences in performance parameters.
Features
The STD10NM60N is an N-channel MOSFET designed for efficient power switching applications. Here are its key features:
1. Voltage: It has a drain-source breakdown voltage (V_ds) of 600V, making it suitable for high-voltage applications.
2. Current: The continuous drain current (I_d) is 9.2A at 25°C.
3. Rds(on): It offers a low on-state resistance (R_ds(on)) of around 0.47 ohms, contributing to reduced conduction losses.
4. Performance: The MOSFET features fast switching capabilities, which enhance efficiency in power conversion applications.
5. Package: It is typically available in a DPAK package, which aids in ease of mounting and thermal management.
6. Applications: Ideal for use in applications such as power supplies, motor controllers, and other circuits requiring efficient power management.
7. Operating Temperature: The device can operate within a temperature range of -55°C to 150°C, ensuring reliability under various environmental conditions.
These specifications make the STD10NM60N a versatile component in power electronic designs.
1. Voltage: It has a drain-source breakdown voltage (V_ds) of 600V, making it suitable for high-voltage applications.
2. Current: The continuous drain current (I_d) is 9.2A at 25°C.
3. Rds(on): It offers a low on-state resistance (R_ds(on)) of around 0.47 ohms, contributing to reduced conduction losses.
4. Performance: The MOSFET features fast switching capabilities, which enhance efficiency in power conversion applications.
5. Package: It is typically available in a DPAK package, which aids in ease of mounting and thermal management.
6. Applications: Ideal for use in applications such as power supplies, motor controllers, and other circuits requiring efficient power management.
7. Operating Temperature: The device can operate within a temperature range of -55°C to 150°C, ensuring reliability under various environmental conditions.
These specifications make the STD10NM60N a versatile component in power electronic designs.
Pinout
The STD10NM60N is an N-channel MOSFET manufactured by STMicroelectronics. It typically comes in a DPAK or TO-252 package. This MOSFET is designed for applications requiring high efficiency and fast switching.
Pin Count and Functions:
1. Gate (G): This pin controls the MOSFET's switching state. Applying a voltage above the threshold turns the device on.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin is the return path for the current entering the drain when the MOSFET is conducting.
The device has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of around 10A. It's suitable for a range of applications, including power supplies, motor drives, and other power management systems.
Pin Count and Functions:
1. Gate (G): This pin controls the MOSFET's switching state. Applying a voltage above the threshold turns the device on.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin is the return path for the current entering the drain when the MOSFET is conducting.
The device has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of around 10A. It's suitable for a range of applications, including power supplies, motor drives, and other power management systems.
Manufacturer
The STD10NM60N is manufactured by STMicroelectronics. STMicroelectronics is a multinational corporation that designs and manufactures a broad range of semiconductor and microelectronics products. The company operates in various sectors, including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is known for its innovation in semiconductor technologies and its ability to cater to a wide array of markets with products that range from discrete semiconductors to advanced integrated circuits.
Application
The STD10NM60N is an N-channel MOSFET used in various applications. Its main areas include:
1. Power Supply Units: Ideal for AC-DC and DC-DC converters due to its high voltage and current handling capabilities.
2. Motor Control: Used in motor drivers for speed and direction control in applications like robotics and industrial machinery.
3. Lighting Systems: Suitable for LED drivers and ballast circuits in lighting applications.
4. Switching Applications: Employed in high-frequency switching circuits owing to its fast switching speed.
5. Battery Management Systems: Utilized in battery protection circuits and charging systems.
These applications leverage the MOSFET's efficiency, reliability, and ability to handle significant power levels.
1. Power Supply Units: Ideal for AC-DC and DC-DC converters due to its high voltage and current handling capabilities.
2. Motor Control: Used in motor drivers for speed and direction control in applications like robotics and industrial machinery.
3. Lighting Systems: Suitable for LED drivers and ballast circuits in lighting applications.
4. Switching Applications: Employed in high-frequency switching circuits owing to its fast switching speed.
5. Battery Management Systems: Utilized in battery protection circuits and charging systems.
These applications leverage the MOSFET's efficiency, reliability, and ability to handle significant power levels.
Package
The STD10NM60N is an N-channel MOSFET from STMicroelectronics. It typically comes in a TO-220 package, which is a common type for power transistors and MOSFETs, known for its three-pin configuration and capability to handle relatively high power.
