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MOSFET 2N-CH 55V 5.1A 8SOIC
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ManufacturerInfineon Technologies
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Mfr. Part #AUIRF7341Q
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Datasheet AUIRF7341Q DataSheet
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Package SOIC-8
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In Stock3959
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Specifications
| Attribute | Value |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain(Id) @ 25°C | 5.1A |
| Rds On(Max) @ Id Vgs | 50mOhm @ 5.1A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 44nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 780pF @ 25V |
| Power - Max | 2.4W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
