AUIRF7343Q

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AUIRF7343Q

+BOM

MOSFET N/P-CH 55V 4.7/3.4A 8SOIC

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Specifications

Attribute Value
Supplier Infineon Technologies
Package / Case Tube
Series HEXFET®
Part Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain(Id) @ 25°C 4.7A, 3.4A
Rds On(Max) @ Id Vgs 50mOhm @ 4.7A, 10V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 36nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 740pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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