BSO612CVG

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BSO612CVG

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BSO612 - 20V-60V COMPLEMENTARY M

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package Bulk
Series SIPMOS®
ProductStatus Active
FETType N and P-Channel
FETFeature Standard
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 3A (Ta), 2A (Ta)
RdsOn(Max)@IdVgs 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V
Vgs(th)(Max)@Id 4V @ 20µA, 4V @ 450µA
GateCharge(Qg)(Max)@Vgs 15.5nC @ 10V, 16nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 340pF, 400pF @ 25V
Power-Max 2W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

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