BSO612CVGHUMA1

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BSO612CVGHUMA1

+BOM

MOSFET N/P-CH 60V 2A 8-SOIC

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Specifications

Attribute Value
Supplier Infineon Technologies,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Bulk
Series SIPMOS®
Part Status Obsolete
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain(Id) @ 25°C 3A, 2A
Rds On(Max) @ Id Vgs 120mOhm @ 3A, 10V
Vgs(th)(Max) @ Id 4V @ 20µA
Gate Charge(Qg)(Max) @ Vgs 15.5nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 340pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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