CSD16340Q3 vs CSD16409Q3 Comparison
This in-depth comparison of the CSD16340Q3 and CSD16409Q3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
TDFN-8
TDFN-8
Description
MOSFET N-CH 25V 21A/60A 8VSON
MOSFET N-CH 25V 15A/60A 8VSON
Series
NexFET™
NexFET™
Part Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
25 V
Current - Continuous Drain(Id) @ 25°C
21A (Ta), 60A (Tc)
15A (Ta), 60A (Tc)
Drive Voltage(Max Rds On Min Rds On)
2.5V, 8V
4.5V, 10V
Rds On(Max) @ Id Vgs
4.5mOhm @ 20A, 8V
8.2mOhm @ 17A, 10V
Vgs(th)(Max) @ Id
1.1V @ 250µA
2.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
9.2 nC @ 4.5 V
5.6 nC @ 4.5 V
Vgs(Max)
+10V, -8V
+16V, -12V
Input Capacitance(Ciss)(Max) @ Vds
1350 pF @ 12.5 V
800 pF @ 12.5 V
Power Dissipation (Max)
3W (Ta)
2.6W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount