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CSD19532Q5BT
+BOMMOSFET N-CH 100V 100A 8VSON
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ManufacturerTexas Instruments
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Mfr. Part #CSD19532Q5BT
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In Stock8996
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Specifications
| Attribute | Value |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 50 V |
| Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | CSD19532 |
Overview
Description
CSD19532Q5BT is a highly integrated, high-performance power stage designed for DC-DC conversion applications, particularly in computing, telecommunications, and industrial systems. It incorporates a power MOSFET driver and two N-channel MOSFETs in a compact, thermally efficient package. The device supports synchronous buck conversion, delivering high efficiency and excellent thermal performance, which is crucial for modern power management solutions.
Key features include a wide input voltage range, adjustable output voltage, and built-in protection mechanisms such as overcurrent protection and thermal shutdown. Its compact footprint simplifies PCB layout, making it ideal for space-constrained applications. The CSD19532Q5BT is typically used in point-of-load converters and can operate in a variety of topologies, providing flexibility for different design requirements. Overall, it is designed to enhance performance while reducing the total component count and improving reliability in power supply designs.
Key features include a wide input voltage range, adjustable output voltage, and built-in protection mechanisms such as overcurrent protection and thermal shutdown. Its compact footprint simplifies PCB layout, making it ideal for space-constrained applications. The CSD19532Q5BT is typically used in point-of-load converters and can operate in a variety of topologies, providing flexibility for different design requirements. Overall, it is designed to enhance performance while reducing the total component count and improving reliability in power supply designs.
Equivalent
The CSD19532Q5BT is a N-channel MOSFET commonly used in power applications. Equivalent products include the CSD19533Q5B, CSD19531Q5B, and the CSD19534Q5B. Additionally, other manufacturers may have similar specifications; look for devices with comparable voltage ratings, current handling capabilities, and R_DS(on) characteristics. Always verify through datasheets for specific applications.
Features
The CSD19532Q5BT is a Power MOSFET designed for high-efficiency applications. Key features include:
1. N-Channel Configuration: Ideal for high-side and low-side switching in power management applications.
2. Low On-Resistance (RDS(on)): Ensures minimal power loss and heat generation, enhancing efficiency.
3. High Voltage Rating: Supports operation in demanding environments, typically up to 40V.
4. Low Gate Charge (Qg): Reduces switching losses and enables faster switching speeds.
5. Thermal Performance: Features a robust thermal design, allowing for effective heat dissipation.
6. Compact Packaging: Available in a compact package (DPAK), facilitating space-saving designs in PCB layouts.
7. High Reliability: Built to withstand a variety of operating conditions, ensuring long-term performance in various applications.
These features make the CSD19532Q5BT suitable for use in power supplies, motor drives, and other energy-efficient systems.
1. N-Channel Configuration: Ideal for high-side and low-side switching in power management applications.
2. Low On-Resistance (RDS(on)): Ensures minimal power loss and heat generation, enhancing efficiency.
3. High Voltage Rating: Supports operation in demanding environments, typically up to 40V.
4. Low Gate Charge (Qg): Reduces switching losses and enables faster switching speeds.
5. Thermal Performance: Features a robust thermal design, allowing for effective heat dissipation.
6. Compact Packaging: Available in a compact package (DPAK), facilitating space-saving designs in PCB layouts.
7. High Reliability: Built to withstand a variety of operating conditions, ensuring long-term performance in various applications.
These features make the CSD19532Q5BT suitable for use in power supplies, motor drives, and other energy-efficient systems.
Pinout
The CSD19532Q5BT is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET, applying a voltage to turn it on or off.
2. Drain (D) - The drain pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S) - The source pin is the point from which the current enters the MOSFET when it is turned on.
4. Body Diode (intrinsic) - Not a separate pin, but the device inherently includes a body diode that allows current to flow in the reverse direction if needed.
5. Thermal Pad - While not counted as a pin, the thermal pad is used for heat dissipation and is connected to the source internally.
This device is commonly used in power management applications due to its high efficiency and low on-resistance.
1. Gate (G) - This pin is used to control the MOSFET, applying a voltage to turn it on or off.
2. Drain (D) - The drain pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S) - The source pin is the point from which the current enters the MOSFET when it is turned on.
4. Body Diode (intrinsic) - Not a separate pin, but the device inherently includes a body diode that allows current to flow in the reverse direction if needed.
5. Thermal Pad - While not counted as a pin, the thermal pad is used for heat dissipation and is connected to the source internally.
This device is commonly used in power management applications due to its high efficiency and low on-resistance.
Manufacturer
The CSD19532Q5BT is manufactured by Texas Instruments (TI), a leading global semiconductor company. Texas Instruments specializes in the design and production of a wide range of analog and digital semiconductor technologies, including power management solutions, microcontrollers, and embedded processors. Founded in 1930 and headquartered in Dallas, Texas, TI serves various industries such as telecommunications, automotive, industrial, and consumer electronics. The company is known for its innovation in analog electronics and for providing solutions that enhance performance and efficiency in electronic systems. TI's products are widely used in a multitude of applications, including battery management, motor control, and signal processing.
Application
The CSD19532Q5BT is a high-performance N-channel MOSFET suitable for various applications, including:
1. Power Management: Used in DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Control: Ideal for driving motors in industrial automation and electric vehicles.
3. Battery Management Systems: Enhances performance in battery charging and discharging applications.
4. Consumer Electronics: Utilized in devices like laptops and smartphones for power efficiency.
5. Telecommunications: Supports power amplification in communication equipment.
Its low on-resistance and high-speed switching capabilities make it versatile across these sectors.
1. Power Management: Used in DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Control: Ideal for driving motors in industrial automation and electric vehicles.
3. Battery Management Systems: Enhances performance in battery charging and discharging applications.
4. Consumer Electronics: Utilized in devices like laptops and smartphones for power efficiency.
5. Telecommunications: Supports power amplification in communication equipment.
Its low on-resistance and high-speed switching capabilities make it versatile across these sectors.
Package
The CSD19532Q5BT is packaged in a DPAK (TO-252) type package. This surface-mount package is designed for efficient thermal performance and compact size, making it suitable for various applications in power management.
