DMG2307L-7

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DMG2307L-7

+BOM

MOSFET P-CH 30V 2.5A SOT-23

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 2.5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 90mOhm @ 2.5A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 8.2 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 371.3 pF @ 15 V
Power Dissipation (Max) 760mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3

Overview

Description

The DMG2307L-7 is a high-performance Schottky barrier diode designed for low forward voltage drop (Vf) and fast switching applications. Key features include:
- Low Vf (~0.38V at 1A) for reduced power loss.
- High current capability (2A average, 30A surge).
- Ultra-fast reverse recovery time (trr < 10ns), ideal for high-frequency circuits.
- Low leakage current, enhancing efficiency.
Commonly used in power supplies, DC-DC converters, reverse polarity protection, and switching regulators, it is housed in a SOD-123FL package for compact PCB designs.
For detailed specs, refer to the datasheet from manufacturers like Diodes Incorporated.

Features

The DMG2307L-7 is a 30V, 5.6A P-channel MOSFET with key features:
- Low On-Resistance (RDS(on)): 7.5mΩ (max) at VGS = -10V, enhancing efficiency.
- High Current Handling: Supports 5.6A continuous drain current.
- Low Gate Charge (Qg): 13nC (typ), enabling fast switching.
- Low Threshold Voltage (VGS(th)): -1V (typ), suitable for low-voltage drive.
- Small Package: SOT-23-3L, ideal for space-constrained designs.
- ESD Protection: Robust against electrostatic discharge.
Commonly used in power management, load switching, and battery protection circuits.

Pinout

The DMG2307L-7 is a P-channel MOSFET in a SOT-23 package with 3 pins:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (typically positive voltage).
3. Drain (D) – Connects to the load.
Key Features:
- Voltage Rating: -30V (max).
- Current Rating: -4.2A (continuous).
- Low On-Resistance (RDS(on)): ~45mΩ (at VGS = -10V).
- Logic-Level Gate Drive (suitable for 3.3V/5V control).
Common Applications:
- Power switching in portable devices.
- Load switching in battery management.
- Reverse polarity protection.
Compact and efficient for low-voltage, high-current applications.

Manufacturer

The DMG2307L-7 is a MOSFET manufactured by Diodes Incorporated, a global semiconductor company specializing in high-quality discrete, analog, and mixed-signal ICs. Founded in 1959 and headquartered in Plano, Texas, Diodes Inc. focuses on power management, signal integrity, and efficiency solutions for consumer electronics, computing, automotive, and industrial applications. The company is known for cost-effective, reliable components and holds a strong presence in the semiconductor industry.

Application

The DMG2307L-7 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection in battery packs.
3. DC-DC Converters – Efficient power conversion in step-down/step-up circuits.
4. Motor Control – Driving small motors in consumer electronics.
5. LED Drivers – Controlling LED backlighting or lighting systems.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, low-voltage (<20V) applications.

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