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EPC8002
+BOMGANFET N-CH 65V 2A DIE
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ManufacturerEPC
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Mfr. Part #EPC8002
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In Stock6767
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Specifications
| Attribute | Value |
| Supplier | EPC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | eGaN® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 65 V |
| Current - Continuous Drain(Id) @ 25°C | 2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 530mOhm @ 500mA, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Vgs(Max) | +6V, -4V |
| Input Capacitance(Ciss)(Max) @ Vds | 21 pF @ 32.5 V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
