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FCH041N60F
+BOMPOWER FIELD-EFFECT TRANSISTOR, 7
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Manufactureronsemi
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Mfr. Part #FCH041N60F
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Datasheet FCH041N60F DataSheet
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Package TO-247-3
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In Stock5466
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Specifications
| Attribute | Value |
| Package | Bulk |
| Series | SuperFET® II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 76A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 41mOhm @ 38A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 360 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 14365 pF @ 100 V |
| PowerDissipation(Max) | 595W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Overview
Description
Key characteristics of the FCH041N60F include low on-resistance, which reduces conduction losses, and fast switching speeds, enhancing efficiency in switching applications. It also has a high threshold voltage and robust avalanche energy capability, contributing to its reliability under demanding conditions.
The MOSFET is built using planar stripe technology, optimizing it for low gate charge and capacitance, which minimizes switching loss and enhances overall performance. Its TO-247 package offers efficient heat dissipation, ensuring stable operation. This combination of features makes the FCH041N60F an excellent choice for engineers focusing on power management and conversion efficiency.
Equivalent
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 41A, making it suitable for high-voltage applications.
2. R_DS(on): The device offers a low on-state resistance, reducing power loss during operation.
3. Fast Switching: It features fast switching capabilities, which help in improving the efficiency of power conversion systems.
4. Package: The FCH041N60F is typically available in a TO-247 package, which provides efficient thermal performance and ease of mounting.
5. Enhanced Thermal Performance: The MOSFET is designed for excellent thermal performance, which is crucial for high-power applications.
6. Applications: Commonly used in power supplies, motor drives, and inverter circuits, the FCH041N60F is suitable for both hard-switching and resonant-mode power conversion.
These features make the FCH041N60F an ideal choice for applications requiring high efficiency, reliability, and performance.
Pinout
Pin Count and Functions:
1. Gate (G): This is the pin that controls the MOSFET. By applying voltage to the gate, you can modulate the conductivity between the drain and source.
2. Drain (D): This pin is where the current flows out of the MOSFET. It is typically connected to the load in power applications.
3. Source (S): This is the pin through which current enters the MOSFET. It is usually connected to the ground or the negative side of the power supply.
The FCH041N60F is designed for high-efficiency and high-speed switching applications. It is commonly used in power supplies, motor drives, and other high-power circuits.
Manufacturer
Application
1. Power Supply Units: Used in switched-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Drives: Suitable for driving motors in industrial and consumer applications.
3. Lighting: Utilized in LED drivers and electronic ballasts for enhanced lighting control.
4. Renewable Energy Systems: Employed in solar inverters and wind energy converters.
5. Uninterruptible Power Supplies (UPS): Provides reliable power backup solutions.
6. Electric Vehicles: Used in powertrain and battery management systems for electric vehicles.
Its high efficiency and fast switching capabilities make it ideal for these applications.