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FDA59N30
+BOMMOSFET N-CH 300V 59A TO3PN
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Manufactureronsemi
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Mfr. Part #FDA59N30
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Datasheet FDA59N30 DataSheet
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Package TO-3PN-3
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In Stock5892
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Specifications
| Attribute | Value |
| Package / Case | Tube |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain(Id) @ 25°C | 59A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 56mOhm @ 29.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4670 pF @ 25 V |
| Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
Overview
Description
The FDA59N30 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in electronic circuits for switching and amplifying electronic signals. This MOSFET is characterized by its ability to handle high voltages and currents, making it suitable for various power applications.
Key specifications of the FDA59N30 typically include a drain-source voltage (V_DS) rating of around 300 volts and a continuous drain current (I_D) of approximately 59 amperes. These features make it ideal for use in power supplies, inverters, motor drivers, and other high-power applications where efficient and reliable switching is necessary.
The device is designed to offer low on-state resistance, ensuring minimal power loss during operation, which is crucial for maintaining energy efficiency. It is housed in a TO-220 package, facilitating easy mounting and heat dissipation. The FDA59N30's robust construction and performance characteristics provide reliability in demanding environments, making it a preferred choice for engineers dealing with high-power electronic designs.
Key specifications of the FDA59N30 typically include a drain-source voltage (V_DS) rating of around 300 volts and a continuous drain current (I_D) of approximately 59 amperes. These features make it ideal for use in power supplies, inverters, motor drivers, and other high-power applications where efficient and reliable switching is necessary.
The device is designed to offer low on-state resistance, ensuring minimal power loss during operation, which is crucial for maintaining energy efficiency. It is housed in a TO-220 package, facilitating easy mounting and heat dissipation. The FDA59N30's robust construction and performance characteristics provide reliability in demanding environments, making it a preferred choice for engineers dealing with high-power electronic designs.
Equivalent
The FDA59N30 is a MOSFET transistor. Equivalent products would typically have similar voltage, current, and package specifications. Some possible equivalents include:
1. IRFZ44N
2. IRF3205
3. STP75NF75
However, always check the datasheets to ensure compatibility in terms of voltage, current, and thermal characteristics to guarantee they meet your specific application requirements.
1. IRFZ44N
2. IRF3205
3. STP75NF75
However, always check the datasheets to ensure compatibility in terms of voltage, current, and thermal characteristics to guarantee they meet your specific application requirements.
Features
The FDA59N30 is an N-channel MOSFET designed for high-speed switching applications. Here are its key features:
1. Voltage Rating: It has a drain-source breakdown voltage (V_DS) of 300V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 59A, allowing it to handle significant power loads.
3. R_DS(on): The on-resistance is relatively low, ensuring efficient current flow with minimal power loss.
4. Package: It typically comes in a TO-220 package, which provides good thermal performance and is easy to mount on PCBs.
5. Fast Switching: The device is designed for fast switching, which is ideal for high-frequency applications and helps in improving efficiency.
6. Thermal Performance: It features a good thermal resistance which helps in effective heat dissipation.
7. Applications: Commonly used in power supply circuits, motor controls, and various other high-speed electronic applications.
8. Enhancement Mode: Operates in enhancement mode, requiring a positive gate-source voltage to conduct.
These features make the FDA59N30 a versatile choice for various electronic applications requiring efficient power management.
1. Voltage Rating: It has a drain-source breakdown voltage (V_DS) of 300V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 59A, allowing it to handle significant power loads.
3. R_DS(on): The on-resistance is relatively low, ensuring efficient current flow with minimal power loss.
4. Package: It typically comes in a TO-220 package, which provides good thermal performance and is easy to mount on PCBs.
5. Fast Switching: The device is designed for fast switching, which is ideal for high-frequency applications and helps in improving efficiency.
6. Thermal Performance: It features a good thermal resistance which helps in effective heat dissipation.
7. Applications: Commonly used in power supply circuits, motor controls, and various other high-speed electronic applications.
8. Enhancement Mode: Operates in enhancement mode, requiring a positive gate-source voltage to conduct.
These features make the FDA59N30 a versatile choice for various electronic applications requiring efficient power management.
Pinout
The FDA59N30 is a power MOSFET, specifically a type of N-channel MOSFET. It typically comes in a TO-220 package, which usually consists of three pins:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and the source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET. It is connected to the load in most applications.
3. Source (S): This pin is the terminal through which the main current exits the MOSFET. It is usually connected to ground or a common return path.
These three pins are fundamental in controlling the flow of electrical current in various power electronic applications. The FDA59N30 is often used in high-efficiency power management applications due to its high current and voltage handling capabilities. Please refer to the specific datasheet of the FDA59N30 for accurate and detailed specifications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and the source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET. It is connected to the load in most applications.
3. Source (S): This pin is the terminal through which the main current exits the MOSFET. It is usually connected to ground or a common return path.
These three pins are fundamental in controlling the flow of electrical current in various power electronic applications. The FDA59N30 is often used in high-efficiency power management applications due to its high current and voltage handling capabilities. Please refer to the specific datasheet of the FDA59N30 for accurate and detailed specifications.
Manufacturer
The FDA59N30 is manufactured by ON Semiconductor, a company specializing in semiconductor components. ON Semiconductor, now known as onsemi, is a prominent player in the electronics industry, providing a wide range of semiconductor solutions for various applications. These include automotive, industrial, cloud, medical, and IoT sectors. The company focuses on energy-efficient solutions, offering products such as power management devices, sensors, and custom devices, alongside standard semiconductor components like transistors and diodes. onsemi is known for its commitment to sustainability and innovation, aiming to enhance energy efficiency and performance across electronic systems.
Application
The FDA59N30 is an N-channel MOSFET widely used in various power applications due to its high current capacity and efficient switching characteristics. Common application areas include:
1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Utilized in motor drivers for industrial and consumer electronics.
3. Inverters: Applied in inverter circuits for solar power systems and uninterruptible power supplies (UPS).
4. LED Drivers: Used in high-power LED lighting systems for efficient current control.
5. Audio Amplifiers: Employed in audio amplification systems for enhanced performance.
6. Battery Management: Integrated into battery charging and management systems for improved energy efficiency.
These applications leverage the MOSFET's fast switching and high efficiency characteristics.
1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Utilized in motor drivers for industrial and consumer electronics.
3. Inverters: Applied in inverter circuits for solar power systems and uninterruptible power supplies (UPS).
4. LED Drivers: Used in high-power LED lighting systems for efficient current control.
5. Audio Amplifiers: Employed in audio amplification systems for enhanced performance.
6. Battery Management: Integrated into battery charging and management systems for improved energy efficiency.
These applications leverage the MOSFET's fast switching and high efficiency characteristics.
Package
The FDA59N30 is a N-channel MOSFET. It typically comes in a TO-220 package, known for its three-lead design that allows for efficient heat dissipation and ease of mounting on a heatsink.
