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FDB035N10A
+BOMMOSFET N-CH 100V 120A D2PAK
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Manufactureronsemi
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Mfr. Part #FDB035N10A
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In Stock1653
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.5mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 116 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7295 pF @ 25 V |
| PowerDissipation(Max) | 333W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Overview
Description
The FDB035N10A is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in electronic applications. Key features typically include a low on-resistance, fast switching speeds, and high efficiency, which make it suitable for use in power management, DC-DC converters, and motor control applications. The "FDB" prefix often indicates a particular manufacturer's series of MOSFETs, while "035" and "10A" refer to specific model characteristics such as voltage and current ratings. This component is generally designed to handle significant power levels while minimizing power loss, and is favored for its reliable performance in demanding environments. Additionally, it is likely packaged in a standard format, such as TO-220 or DPAK, to facilitate easy integration into various circuits. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines to ensure proper implementation and performance in your specific project.
Equivalent
The FDB035N10A is an N-channel MOSFET. Equivalent products with similar specifications include:
1. IRLB3034PBF from Infineon Technologies
2. IPP110N10N3 G from Infineon Technologies
3. AUIRFS4115 from Infineon Technologies
4. STP110N10F7 from STMicroelectronics
These equivalents may vary slightly in parameters, so it's important to check their datasheets to ensure they meet the specific requirements of your application.
1. IRLB3034PBF from Infineon Technologies
2. IPP110N10N3 G from Infineon Technologies
3. AUIRFS4115 from Infineon Technologies
4. STP110N10F7 from STMicroelectronics
These equivalents may vary slightly in parameters, so it's important to check their datasheets to ensure they meet the specific requirements of your application.
Features
The FDB035N10A is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. Here are its key features:
1. N-Channel MOSFET: This device is an N-channel MOSFET, which means it conducts when a positive voltage is applied to the gate relative to the source.
2. Low On-Resistance: The FDB035N10A features a low on-resistance, which minimizes power losses and increases efficiency during operation.
3. High Current Capacity: It supports high current levels, making it suitable for demanding power applications.
4. Fast Switching Speed: The MOSFET provides fast switching speeds, which is beneficial for applications requiring quick on and off cycles.
5. 10V Maximum Gate-Source Voltage: It can handle up to 10 volts between the gate and source terminals.
6. Thermal Performance: The design includes features to efficiently manage heat, enhancing reliability in power-intensive environments.
These features make the FDB035N10A suitable for applications such as DC-DC converters, motor drives, and other power management systems.
1. N-Channel MOSFET: This device is an N-channel MOSFET, which means it conducts when a positive voltage is applied to the gate relative to the source.
2. Low On-Resistance: The FDB035N10A features a low on-resistance, which minimizes power losses and increases efficiency during operation.
3. High Current Capacity: It supports high current levels, making it suitable for demanding power applications.
4. Fast Switching Speed: The MOSFET provides fast switching speeds, which is beneficial for applications requiring quick on and off cycles.
5. 10V Maximum Gate-Source Voltage: It can handle up to 10 volts between the gate and source terminals.
6. Thermal Performance: The design includes features to efficiently manage heat, enhancing reliability in power-intensive environments.
These features make the FDB035N10A suitable for applications such as DC-DC converters, motor drives, and other power management systems.
Pinout
The FDB035N10A is a power MOSFET manufactured by Infineon Technologies. It typically comes in a TO-263 package, which is a D2PAK housing format for surface-mount applications. This package generally has three main pins, along with an additional tab that acts as a fourth connection for heat dissipation.
1. Drain (D): Connected to the tab and one of the pins, this serves as the main terminal for the load current.
2. Gate (G): This is the control pin. A voltage applied here regulates the flow of current between the drain and source.
3. Source (S): The terminal through which current exits, connected to the load.
The main function of the FDB035N10A is to switch and amplify electronic signals in power applications, commonly used in automotive, industrial, and consumer electronics to efficiently control high-power loads.
1. Drain (D): Connected to the tab and one of the pins, this serves as the main terminal for the load current.
2. Gate (G): This is the control pin. A voltage applied here regulates the flow of current between the drain and source.
3. Source (S): The terminal through which current exits, connected to the load.
The main function of the FDB035N10A is to switch and amplify electronic signals in power applications, commonly used in automotive, industrial, and consumer electronics to efficiently control high-power loads.
Manufacturer
The FDB035N10A is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer known for producing a wide range of electronic components used in various applications, including automotive, industrial, consumer electronics, and security systems. The company is recognized for its innovations in power semiconductors, microcontrollers, sensors, and other digital security solutions. As a leading player in the semiconductor industry, Infineon focuses on providing efficient, reliable, and secure technologies aimed at improving energy efficiency and enabling smart, connected solutions across different sectors.
Application
The FDB035N10A is a power MOSFET designed for various applications, particularly where efficient power management and switching are crucial. Its key application areas include:
1. DC-DC Converters: Used in power supply circuits to efficiently convert voltages.
2. Switching Regulators: Ensures stable voltage output in electronic devices.
3. Motor Control: Helps in controlling the speed and torque of electric motors.
4. Load Switches: Manages the power distribution in electronic circuits.
5. Battery Management Systems: Facilitates efficient battery charging and discharging.
6. Telecommunications Equipment: Supports power management in communication devices.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.
1. DC-DC Converters: Used in power supply circuits to efficiently convert voltages.
2. Switching Regulators: Ensures stable voltage output in electronic devices.
3. Motor Control: Helps in controlling the speed and torque of electric motors.
4. Load Switches: Manages the power distribution in electronic circuits.
5. Battery Management Systems: Facilitates efficient battery charging and discharging.
6. Telecommunications Equipment: Supports power management in communication devices.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.
Package
The FDB035N10A is a MOSFET with a TO-263 package type.
