FDC637AN

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FDC637AN

+BOM

MOSFET N-CH 20V 6.2A SUPERSOT6

  • Manufactureronsemi

  • Mfr. Part #FDC637AN

  • Package SOT-23-6

  • In Stock1696

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 6.2A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V
Rds On(Max) @ Id Vgs 24mOhm @ 6.2A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 16 nC @ 4.5 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 1125 pF @ 10 V
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6

Overview

Description

FDC637AN appears to be a specific component or product, often referenced in technical or electronic contexts. However, without specific context or detailed information about the product, it's challenging to provide a precise introduction. Generally, such a designation could refer to a semiconductor, transistor, or integrated circuit used in various electronic applications. Products like these are integral to controlling electrical signals or power management in electronic devices.
For a concise introduction, understanding its role and specifications is crucial. Typically, you would want to know the manufacturer, its primary functions, electrical characteristics (such as voltage and current ratings), and potential applications in circuits or systems. Data sheets provided by manufacturers usually offer comprehensive details about the product, including its pin configuration, absolute maximum ratings, and performance characteristics.
Should you require detailed and specific information about the FDC637AN, consulting the manufacturer's documentation or technical support would be advisable to ensure accurate and beneficial knowledge for its application.

Equivalent

The FDC637AN is a dual N-channel MOSFET. Equivalent products may include:
1. 2N7002DW - A dual N-channel MOSFET with similar characteristics.
2. Si1902DL - A comparable dual N-channel MOSFET.
3. BSS138BK - Another alternative for low-voltage applications.
Make sure to compare specific electrical characteristics and package types to ensure compatibility with your application.

Features

The FDC637AN is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency in switching and amplification applications. Key features include:
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 5.8A.
2. Low On-Resistance: The device features low R_DS(on), which reduces power loss and improves overall efficiency, particularly beneficial in high-frequency applications.
3. Fast Switching Speed: The FDC637AN is designed for rapid switching, enhancing performance in applications requiring high-frequency operation.
4. SOT-23 Package: It comes in a compact SOT-23 package, which is suitable for space-constrained circuit boards.
5. Thermal Performance: The package allows for effective heat dissipation, ensuring stability under extended operation.
6. Enhanced Reliability: Built with high-quality materials, the FDC637AN offers improved reliability in various environmental conditions.
These features make the FDC637AN versatile for use in power management, motor control, and other electronic circuits requiring efficient switching.

Pinout

The FDC637AN is a dual N-channel MOSFET in an SOT-363 (SC-88) package with 6 pins.
### Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal of the first MOSFET.
3. Pin 3 (Drain 1): Drain terminal of the first MOSFET.
4. Pin 4 (Drain 2): Drain terminal of the second MOSFET.
5. Pin 5 (Source 2): Source terminal of the second MOSFET.
6. Pin 6 (Gate 2): Controls the second MOSFET.
### Key Features:
- Logic-level gate drive (suitable for 5V operation).
- Low on-resistance (RDS(on)) for efficient switching.
- Commonly used in power management, load switching, and DC-DC converters.

Manufacturer

The FDC637AN is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a global company that specializes in semiconductor manufacturing. It designs and produces a wide range of semiconductor components used in various electronic products and systems. The company focuses on energy-efficient solutions for a wide array of applications, including automotive, industrial, communications, computing, and consumer electronics. onsemi is known for its emphasis on power management solutions, analog devices, and sensors, aiming to support advancements in energy efficiency and sustainability across different industries.

Application

The FDC637AN is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in voltage regulators.
4. Motor Control – Driving small motors in consumer electronics.
5. Automotive Systems – Low-power switching in infotainment or lighting.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, low-voltage (<20V) applications.

Package

The FDC637AN is a dual N-channel MOSFET package in a SuperSOT-6 (also known as TSOP-6) form factor. This package type is compact, making it suitable for high-density applications where space conservation is critical.

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