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FDMS86150
+BOMMOSFET N CH 100V 16A POWER56
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Manufactureronsemi
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Mfr. Part #FDMS86150
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Datasheet FDMS86150 DataSheet
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Package TDFN-8
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In Stock4382
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 16A (Ta), 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 4.85mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4065 pF @ 50 V |
| Power Dissipation (Max) | 2.7W (Ta), 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Overview
Description
The FDMS86150 is a N-channel PowerTrench® MOSFET designed by ON Semiconductor/Fairchild. It is optimized for use in computing and telecommunications equipment where high efficiency is essential. This MOSFET features a low on-resistance (R_DS(on)) and fast switching capability, which helps reduce power loss and improve overall system efficiency. The device is packaged in a compact, surface-mount SO-8 package, making it suitable for space-constrained applications.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 42A. The device is also designed to operate at high temperatures, with a maximum junction temperature of 175°C. Its low gate charge facilitates low drive losses, and the PowerTrench® technology enhances its performance by minimizing conduction and switching losses.
The FDMS86150 is frequently used in DC-DC converters, motor drives, and other applications requiring efficient power management. Its robust design ensures reliability and durability, making it a popular choice for engineers looking to optimize power efficiency in electronic devices.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 42A. The device is also designed to operate at high temperatures, with a maximum junction temperature of 175°C. Its low gate charge facilitates low drive losses, and the PowerTrench® technology enhances its performance by minimizing conduction and switching losses.
The FDMS86150 is frequently used in DC-DC converters, motor drives, and other applications requiring efficient power management. Its robust design ensures reliability and durability, making it a popular choice for engineers looking to optimize power efficiency in electronic devices.
Equivalent
The FDMS86150 is a MOSFET commonly used for power management applications. Equivalent products are typically other N-channel Power MOSFETs with similar specifications. Some potential equivalents could be:
1. Infineon BSC100N06LS3 G – Similar voltage and current ratings.
2. STMicroelectronics STP80NF10 – Comparable in terms of voltage and current handling.
3. Vishay SIHP054N10 – Features close electrical characteristics.
Always verify the specific electrical characteristics and thermal performance to ensure compatibility for your application.
1. Infineon BSC100N06LS3 G – Similar voltage and current ratings.
2. STMicroelectronics STP80NF10 – Comparable in terms of voltage and current handling.
3. Vishay SIHP054N10 – Features close electrical characteristics.
Always verify the specific electrical characteristics and thermal performance to ensure compatibility for your application.
Features
The FDMS86150 is a PowerTrench® MOSFET designed for use in power management applications. Key features include:
1. Low On-Resistance: It offers low R_DS(on), which reduces conduction losses and improves efficiency, particularly in high-frequency applications.
2. Fast Switching Speed: The MOSFET is optimized for fast switching, contributing to enhanced performance in power conversion applications.
3. Enhanced Thermal Performance: The package design improves heat dissipation, allowing for better thermal management and reliability in high-power systems.
4. High Avalanche Capability: It can handle high avalanche energy, which provides robustness during voltage spikes.
5. Low Gate Charge: This feature ensures that the device requires less energy to switch, further improving system efficiency.
6. Compact Package: Available in a space-saving package suitable for compact designs, making it ideal for dense electronic systems.
7. Wide Range of Applications: Suitable for use in various applications, including DC-DC converters, load switches, and other power management systems.
Overall, the FDMS86150 is engineered for high efficiency, reliability, and performance in demanding electronic applications.
1. Low On-Resistance: It offers low R_DS(on), which reduces conduction losses and improves efficiency, particularly in high-frequency applications.
2. Fast Switching Speed: The MOSFET is optimized for fast switching, contributing to enhanced performance in power conversion applications.
3. Enhanced Thermal Performance: The package design improves heat dissipation, allowing for better thermal management and reliability in high-power systems.
4. High Avalanche Capability: It can handle high avalanche energy, which provides robustness during voltage spikes.
5. Low Gate Charge: This feature ensures that the device requires less energy to switch, further improving system efficiency.
6. Compact Package: Available in a space-saving package suitable for compact designs, making it ideal for dense electronic systems.
7. Wide Range of Applications: Suitable for use in various applications, including DC-DC converters, load switches, and other power management systems.
Overall, the FDMS86150 is engineered for high efficiency, reliability, and performance in demanding electronic applications.
Pinout
The FDMS86150 is a PowerTrench® MOSFET designed by ON Semiconductor. It typically comes in a 3-pin package, commonly a TO-252 (DPAK) configuration. The three pins are:
1. Gate (G): This pin controls the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current enters the MOSFET when it is in the 'on' state.
3. Source (S): This pin is connected to the ground or the load, and it is the terminal through which the current exits the MOSFET.
The FDMS86150 is used in applications that require efficient power management, such as DC-DC converters and synchronous rectification. It offers features like low ON-resistance and fast switching capability, which contribute to reduced power losses and improved efficiency in electronic circuits.
1. Gate (G): This pin controls the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current enters the MOSFET when it is in the 'on' state.
3. Source (S): This pin is connected to the ground or the load, and it is the terminal through which the current exits the MOSFET.
The FDMS86150 is used in applications that require efficient power management, such as DC-DC converters and synchronous rectification. It offers features like low ON-resistance and fast switching capability, which contribute to reduced power losses and improved efficiency in electronic circuits.
Manufacturer
The FDMS86150 is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor manufacturing company that focuses on energy-efficient innovations and smart power management solutions. They produce a wide range of semiconductor components that are used in various industries including automotive, industrial, communications, computing, and consumer electronics. The company is known for providing components that help in the design and manufacture of electronic systems, enhancing efficiency and performance.
Application
The FDMS86150 is a power MOSFET commonly used in various electronic applications. Its primary application areas include power management, DC-DC converters, load switches, and motor drives. It is also utilized in computing and telecommunications equipment for efficient power handling. The MOSFET's low on-resistance and high-speed switching capabilities make it ideal for improving energy efficiency in power supplies and battery-operated devices. Additionally, it is employed in automotive electronics for controlling loads and managing power distribution, contributing to enhanced performance and reliability in these systems.
Package
The FDMS86150 is typically housed in an SO-8 package, which is a standard surface-mount package used for semiconductors.
