FDMS86255

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FDMS86255

+BOM

MOSFET N-CH 150V 10A/45A POWER56

  • Manufactureronsemi

  • Mfr. Part #FDMS86255

  • Package QFN-8

  • In Stock6020

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 10A (Ta), 45A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 12.4mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 63 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4480 pF @ 75 V
PowerDissipation(Max) 2.7W (Ta), 113W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Overview

Description

The FDMS86255 is a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications for efficient power management and switching. Manufactured by ON Semiconductor, this component is part of the PowerTrench® series, which is known for minimizing conduction losses, thus enhancing energy efficiency in electronic circuits.
Key features of the FDMS86255 include:
1. Low On-Resistance: It offers low R_DS(on) values, which reduces power dissipation in the form of heat and increases overall system efficiency.
2. Sophisticated Design: Incorporates advanced trench technology to optimize performance, especially in high-frequency applications.
3. Reliability: Engineered for robust performance, the FDMS86255 is suitable for use in automotive, industrial, and consumer electronic applications.
4. Thermal Management: Designed to manage heat dissipation effectively, it can handle higher currents without overheating, ensuring stable operation.
These features make the FDMS86255 a suitable choice for applications requiring efficient power management and reliable operation under varying conditions.

Equivalent

The FDMS86255 is a PowerTrench MOSFET by ON Semiconductor. Equivalent or similar products include:
1. Nexperia's PSMN1R2-30YLD: Offers similar voltage and current characteristics.
2. Infineon's IPB017N06N3 G: Features comparable RDS(on) and switching performance.
3. Vishay's SI7336ADP: Shares similar power handling capabilities.
4. STMicroelectronics' STL120N4F7: Provides equivalent performance characteristics.
Always verify specifications in the datasheets to ensure compatibility for your application.

Features

The FDMS86255 is a power MOSFET designed for a variety of applications. Here are its key features:
1. Type: It is an N-channel MOSFET.
2. Voltage and Current Ratings: Typically supports a voltage of up to 25V and has a current rating of 60A, making it suitable for high-efficiency power management applications.
3. RDS(on): It has a low on-state resistance, often around 1.7 mΩ, which helps reduce power loss and improve efficiency.
4. Package: Available in a Power56 package, which is designed for better thermal performance.
5. Technology: Utilizes advanced trench technology to provide a high density cell design for improved performance.
6. Applications: Commonly used in DC-DC converters, motor control, and other applications requiring efficient power switching.
7. Thermal Performance: Designed to handle significant power dissipation with efficient heat spreading capabilities.
These features make the FDMS86255 a reliable choice for high-efficiency power conversion and management in various electronic devices.

Pinout

The FDMS86255 is a Power Trench® MOSFET produced by ON Semiconductor. It is typically used in power management applications. The device is packaged in an SO-8 (Small Outline, 8 leads) package. This indicates that the FDMS86255 has 8 pins.
The key functions of the FDMS86255 include:
1. Drain (D) - This is the terminal for current flow; it is connected to the load.
2. Source (S) - This terminal is connected to ground or the return path.
3. Gate (G) - The gate terminal controls the MOSFET's operation by allowing voltage to determine the flow of current between the drain and source.
Typically, in an SO-8 package, the configuration includes multiple pins for the drain and source to handle higher current levels:
- Pins 1, 2, 3, and 4 may be connected to the Source (S).
- Pins 5, 6, 7, and 8 may be connected to the Drain (D).
- The Gate (G) is usually a single pin, often pin 4 or 5, depending on specific internal configurations.
Always refer to the manufacturer's datasheet for precise pin configuration and electrical characteristics.

Manufacturer

The FDMS86255 is manufactured by ON Semiconductor, which is a semiconductor company. ON Semiconductor focuses on designing and producing various semiconductor components, including power management solutions, sensors, and connectivity devices. The company serves a wide range of applications in sectors such as automotive, industrial, consumer electronics, and communications.

Application

The FDMS86255 is a PowerTrench® MOSFET designed for applications requiring efficient power management and enhanced thermal performance. Its primary application areas include:
1. DC-DC Converters: Used in buck and boost converters for voltage regulation.
2. Motor Drives: Suitable for driving motors in various consumer electronics.
3. Load Switches: Acts as a switch for power distribution in battery-powered devices.
4. Telecom Equipment: Provides efficient power delivery in networking and telecommunications systems.
5. Power Supply Units: Enhances efficiency in both industrial and consumer power supplies.
6. Computing: Employed in voltage regulation modules for CPUs.
Its low on-resistance and high efficiency make it ideal for compact and energy-efficient designs.

Package

The FDMS86255 is a MOSFET that typically comes in an SO-8 (Small Outline 8-lead) package.

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