FDP33N25

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FDP33N25

+BOM

MOSFET N-CH 250V 33A TO220-3

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Specifications

Attribute Value
Package Tube
Series UniFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 94mOhm @ 16.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 48 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2135 pF @ 25 V
PowerDissipation(Max) 235W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Overview

Equivalent

Equivalent products to the FDP33N25 (N-channel MOSFET, 250V, 33A) include:
- IRFP250N (200V, 30A)
- STP33N25 (250V, 33A)
- IXFH33N25 (250V, 33A)
- IRF3205 (55V, 110A) – lower voltage, higher current
Check datasheets for exact specs before substitution.

Features

The FDP33N25 is an N-channel MOSFET with the following key features:
- Voltage Rating: 250V (drain-source, VDSS)
- Current Rating: 33A (continuous drain current, ID)
- Low On-Resistance: Typically 85mΩ (RDS(on) at VGS = 10V)
- Fast Switching: Suitable for high-efficiency power applications
- Gate-Source Voltage (VGS): ±20V (max)
- Power Dissipation: 150W (TC = 25°C)
- Package: TO-220 (through-hole, easy to mount)
Commonly used in power supplies, motor control, and DC-DC converters due to its high current handling and low conduction losses.

Pinout

The FDP33N25 is an N-channel MOSFET in a TO-220 package with 3 pins and the following functions:
1. Gate (G): Controls the switching operation (input signal).
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference terminal (low-voltage side).
Key specs:
- VDS: 250V
- ID: 33A (continuous)
- RDS(on): 85mΩ (max at 10V VGS)
Commonly used in power switching applications like motor drives and inverters.

Manufacturer

The FDP33N25 is an N-channel MOSFET manufactured by Fairchild Semiconductor, a well-known American company specializing in power electronics and semiconductor solutions.
Fairchild Semiconductor, founded in 1957, was a pioneer in transistor technology and later became a key supplier of power management components. It was acquired by ON Semiconductor in 2016, which continues to produce many Fairchild legacy products, including the FDP33N25.
The company was known for high-performance discrete semiconductors, analog ICs, and power solutions used in computing, automotive, and industrial applications. Today, ON Semiconductor maintains Fairchild’s product lines while expanding its own portfolio.

Application

The FDP33N25 is an N-channel MOSFET commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for brushed DC and stepper motors.
3. Inverters – Power conversion in UPS and solar inverters.
4. Automotive Systems – Electronic control units (ECUs), lighting.
5. Industrial Equipment – High-efficiency switching applications.
With a 250V drain-source voltage (VDS) and 33A current rating, it suits medium-to-high-power switching tasks requiring low on-resistance (RDS(on)).

Package

The FDP33N25 is a N-channel MOSFET typically available in a TO-220 package. This package type is common for power transistors, offering good thermal performance and ease of mounting. The TO-220 package has three leads and a metal tab for heat dissipation, making it suitable for high-power applications.

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