FQA70N10

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FQA70N10

+BOM

MOSFET N-CH 100V 70A TO3PN

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Specifications

Attribute Value
Package / Case Tube
Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 70A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 23mOhm @ 35A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 110 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 3300 pF @ 25 V
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN

Overview

Description

The FQA70N10 is a 100V, 70A N-channel MOSFET designed for high-power switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 12mΩ (at VGS = 10V), reducing conduction losses.
- High Current Handling: Supports up to 70A continuous drain current.
- Fast Switching: Suitable for DC-DC converters, motor drives, and power supplies.
- Avalanche Energy Rated: Enhances reliability in inductive load conditions.
- TO-3P Package: Robust thermal performance for heat dissipation.
Commonly used in industrial, automotive, and power management systems, the FQA70N10 balances efficiency and durability. Always refer to the datasheet for detailed specifications and application guidelines.

Equivalent

Equivalent products to the FQA70N10 (100V, 70A N-channel MOSFET) include:
- IRF3205 (55V, 110A)
- IRL40B209 (100V, 74A)
- STP80NF10 (100V, 80A)
- IXFH70N10X (100V, 70A)
Check datasheets for exact specs and pin compatibility.

Features

The FQA70N10 is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 70A (continuous)
- Low On-Resistance (RDS(on)): Typically 8.5mΩ at VGS = 10V
- Fast Switching Speed: Suitable for high-efficiency applications
- High Power Handling: Robust design for power management
- Avalanche Energy Rated: Enhances reliability in inductive loads
- Package: TO-3P (robust, high-power dissipation)
Common applications include motor drives, power supplies, and DC-DC converters. Its low RDS(on) and high current capability make it efficient for high-power switching.

Pinout

The FQA70N10 is an N-channel MOSFET with 3 pins and the following functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Connects to ground (low-voltage side).
Key specifications:
- 100V drain-source voltage (VDS).
- 70A continuous drain current (ID).
- Low on-resistance (RDS(on)).
Commonly used in power switching applications like motor drives, inverters, and DC-DC converters.

Application

The FQA70N10, a 100V N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge drivers, brushed/brushless motor drives.
3. Automotive Systems – Electronic control units (ECUs), LED drivers.
4. Industrial Applications – Inverters, solenoids, and relay replacements.
5. Audio Amplifiers – Class-D amplifier output stages.
Its low on-resistance (RDS(on)) and high current handling (70A) make it suitable for high-efficiency switching applications.

Package

The FQA70N10 is a N-channel MOSFET typically available in a TO-3PN (TO-247) package. This package is robust, suitable for high-power applications, and features three leads (gate, drain, source) with a metal tab for heat dissipation. It’s commonly used in power supplies, motor control, and inverters due to its high current (70A) and voltage (100V) ratings.

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