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FQD2N80TM
+BOMMOSFET N-CH 800V 1.8A DPAK
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Manufactureronsemi
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Mfr. Part #FQD2N80TM
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In Stock8545
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Specifications
| Attribute | Value |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 1.8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 6.3Ohm @ 900mA, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 550 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Overview
Description
FQD2N80TM is a dual N-channel enhancement MOSFET in the FQD family (Fairchild/ON Semiconductor). It contains two high-voltage N-channel MOSFETs in a single package, geared for high-voltage switching in power electronics. Typical uses include switch‑mode power supplies, PFC stages, isolated DC‑DC converters, and motor-drive applications where two MOSFETs are needed in one device. The part targets a high breakdown voltage (around the 800 V class) with relatively low on-resistance and fast switching. It comes in a surface-mount power package (e.g., DPAK/D2PAK style) and uses standard gate drive voltages (Vgs up to ±20 V). For exact specs—Vds, Id, Rds(on), switching characteristics, and packaging—consult the current datasheet. Design notes: provide adequate heat sinking, observe safe operating area, use proper gate-drive conditioning and protection, and manage dead time in half-bridge configurations.
Features
FQD2N80TM features (concise):
- N-channel enhancement-mode power MOSFET
- 800 V blocking voltage (Vds)
- Fast switching suitable for high-voltage SMPS, PFC, and inverters
- Built-in intrinsic body diode with good reverse recovery
- Rugged dv/dt tolerance and avalanche ruggedness
- Gate characteristics and capacitances optimized for switch applications
- RoHS-compliant, typically packaged in a TO-220 style (FQD2N80TM)
- 100% device-tested with standard reliability checks
Note: for exact electricals (Rds(on), Id, gate charge, temperature range), consult the official datasheet.
- N-channel enhancement-mode power MOSFET
- 800 V blocking voltage (Vds)
- Fast switching suitable for high-voltage SMPS, PFC, and inverters
- Built-in intrinsic body diode with good reverse recovery
- Rugged dv/dt tolerance and avalanche ruggedness
- Gate characteristics and capacitances optimized for switch applications
- RoHS-compliant, typically packaged in a TO-220 style (FQD2N80TM)
- 100% device-tested with standard reliability checks
Note: for exact electricals (Rds(on), Id, gate charge, temperature range), consult the official datasheet.
Pinout
- Pin count: 3 leads (Gate, Drain, Source) with the drain typically connected to the tab (power package).
- Function: N-channel enhancement-mode power MOSFET used as a high-voltage switching device (800 V class).
- Function: N-channel enhancement-mode power MOSFET used as a high-voltage switching device (800 V class).
Manufacturer
- Manufacturer: Fairchild Semiconductor (now part of On Semiconductor).
- What kind of company: A semiconductor company that designs, manufactures, and sells discrete semiconductors and integrated circuits.
- What kind of company: A semiconductor company that designs, manufactures, and sells discrete semiconductors and integrated circuits.
Application
FQD2N80TM is an 800 V-class N-channel power MOSFET used for high-voltage switching. Common applications include:
- Offline AC-DC power supplies (primary-side switches, PFC)
- LLC and other resonant/offline DC-DC converters
- Solar PV and renewable-energy inverters
- Uninterruptible power supplies (UPS) and battery chargers
- Industrial motor drives and variable-frequency drives
- High-voltage DC-DC conversion for telecom/datacom and data centers
These devices are chosen for high-voltage handling and efficient switching in power-electronics applications.
- Offline AC-DC power supplies (primary-side switches, PFC)
- LLC and other resonant/offline DC-DC converters
- Solar PV and renewable-energy inverters
- Uninterruptible power supplies (UPS) and battery chargers
- Industrial motor drives and variable-frequency drives
- High-voltage DC-DC conversion for telecom/datacom and data centers
These devices are chosen for high-voltage handling and efficient switching in power-electronics applications.
Package
D2PAK (TO-263) surface-mount package.
