FQP7N80C

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FQP7N80C

+BOM

MOSFET N-CH 800V 6.6A TO220-3

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Specifications

Attribute Value
Package / Case Bulk,Tube
Series QFET®
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain(Id) @ 25°C 6.6A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 1.9Ohm @ 3.3A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 35 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1680 pF @ 25 V
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

Overview

Description

The FQP7N80C is an N-channel MOSFET designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 800V
- Current Rating: 7A (continuous)
- Low On-Resistance (RDS(on)): ~1.2Ω (max)
- Fast Switching: Optimized for efficiency in power supplies, inverters, and motor control.
- Package: TO-220 (through-hole), ensuring good thermal performance.
It is commonly used in AC-DC converters, SMPS (Switched-Mode Power Supplies), and industrial power systems where high breakdown voltage and reliability are critical.
Advantages:
✔ High voltage tolerance
✔ Low gate charge for faster switching
✔ Robust thermal performance
Typical Applications:
- Offline power supplies
- LED drivers
- Electronic ballasts
For detailed specs, refer to the datasheet from the manufacturer (e.g., Fairchild/ON Semiconductor).

Equivalent

Equivalent products to the FQP7N80C (800V, 7A MOSFET) include:
- IRF840 (500V, 8A) – Lower voltage rating.
- STP7NK80Z (800V, 7A) – Direct alternative.
- IXFH7N80 (800V, 7A) – Similar specs.
- 2SK2837 (800V, 7A) – Comparable performance.
Check datasheets for exact compatibility in your circuit.

Features

The FQP7N80C is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V (drain-to-source, VDSS)
- Current Rating: 7A (continuous drain current, ID)
- Low On-Resistance: 1.2Ω (RDS(on)) at 10V gate drive
- Fast Switching: Low gate charge (Qg ~ 28nC) for efficient performance
- High Power Handling: 190W power dissipation (PD)
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-220 (through-hole, easy mounting)
Ideal for switching power supplies, inverters, and motor control due to its high voltage and efficient switching characteristics.

Application

The FQP7N80C, an N-channel MOSFET with 800V voltage rating and 7A current capacity, is commonly used in:
1. Power Supplies – Switch-mode (SMPS), AC-DC converters.
2. Lighting – LED drivers, ballast controls.
3. Motor Control – Inverters, H-bridge circuits.
4. Industrial Applications – High-voltage switching, energy management.
5. Renewable Energy – Solar inverters, power conditioning.
Its high voltage tolerance and efficiency make it suitable for medium-power switching applications.

Package

The FQP7N80C is a MOSFET transistor in a TO-220 package. This package type is through-hole mountable, provides good thermal dissipation, and is commonly used for power applications. It has three leads (Gate, Drain, Source) and a metal tab for heatsink attachment. Suitable for medium to high-power circuits.

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