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IPB65R095C7
+BOM-
ManufacturerInfineon Technologies
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Mfr. Part #IPB65R095C7
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In Stock6564
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Specifications
| Attribute | Value |
| Brand | Infineon Technologies |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Packaging | Tube |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Technology | Si |
Overview
Description
The IPB65R095C7 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Manufactured by Infineon Technologies, it features a Voltage rating of 650V and a maximum continuous drain current of 95A. This device is built on the CoolMOS™ technology, which provides low on-resistance (RDS(on)) and fast switching capabilities, making it suitable for power supply applications, motor drives, and energy conversion systems.
Key specifications include a low gate threshold voltage, high-speed switching performance, and excellent thermal stability, which enhance efficiency and reduce switching losses. The IPB65R095C7 is typically housed in a TO-220 package, allowing for easy heat dissipation and integration into a variety of electronic circuits. Its attributes make it a popular choice for designers seeking to improve energy efficiency and performance in power electronic systems.
Key specifications include a low gate threshold voltage, high-speed switching performance, and excellent thermal stability, which enhance efficiency and reduce switching losses. The IPB65R095C7 is typically housed in a TO-220 package, allowing for easy heat dissipation and integration into a variety of electronic circuits. Its attributes make it a popular choice for designers seeking to improve energy efficiency and performance in power electronic systems.
Equivalent
The IPB65R095C7 is an N-channel MOSFET known for its low R_DS(on) and high voltage rating. Equivalent products include:
1. IRF3205 - 55V, 110A, R_DS(on) ~ 8 mΩ
2. STP55NF06L - 60V, 55A, R_DS(on) ~ 10 mΩ
3. BSC094N06LS - 60V, 94A, R_DS(on) ~ 4.5 mΩ
Always check datasheets for specific parameters to ensure compatibility with your application.
1. IRF3205 - 55V, 110A, R_DS(on) ~ 8 mΩ
2. STP55NF06L - 60V, 55A, R_DS(on) ~ 10 mΩ
3. BSC094N06LS - 60V, 94A, R_DS(on) ~ 4.5 mΩ
Always check datasheets for specific parameters to ensure compatibility with your application.
Features
The IPB65R095C7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for use in various applications, including industrial drives and renewable energy systems. Key features include:
1. Voltage Rating: 650V, making it suitable for medium-voltage applications.
2. Current Rating: Capable of handling up to 95A, allowing for robust performance in demanding environments.
3. Low Switching Losses: Designed for efficient operation, minimizing energy loss during switching.
4. Fast Switching Speed: Enhances overall system efficiency and reduces thermal stress in applications.
5. High Temperature Operation: Rated for operation at high junction temperatures, improving reliability in challenging conditions.
6. Robustness: Built to withstand harsh industrial environments with reliable thermal performance.
7. Package Type: Typically available in a standard TO-247 package, facilitating easy integration into circuits.
These features make the IPB65R095C7 suitable for various power electronics applications, including inverters, converters, and motor drives.
1. Voltage Rating: 650V, making it suitable for medium-voltage applications.
2. Current Rating: Capable of handling up to 95A, allowing for robust performance in demanding environments.
3. Low Switching Losses: Designed for efficient operation, minimizing energy loss during switching.
4. Fast Switching Speed: Enhances overall system efficiency and reduces thermal stress in applications.
5. High Temperature Operation: Rated for operation at high junction temperatures, improving reliability in challenging conditions.
6. Robustness: Built to withstand harsh industrial environments with reliable thermal performance.
7. Package Type: Typically available in a standard TO-247 package, facilitating easy integration into circuits.
These features make the IPB65R095C7 suitable for various power electronics applications, including inverters, converters, and motor drives.
Pinout
The IPB65R095C7 is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency applications. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching state. A positive voltage relative to the source allows current to flow from drain to source.
2. Drain (D): The terminal through which the main current flows out when the device is on.
3. Source (S): The terminal through which the current enters the MOSFET.
The other two pins are usually not utilized for standard connections and may be related to package design or internal features.
This MOSFET is characterized by low on-resistance (RDS(on)) and is suitable for various applications, including power conversion and motor control. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
1. Gate (G): Controls the MOSFET's switching state. A positive voltage relative to the source allows current to flow from drain to source.
2. Drain (D): The terminal through which the main current flows out when the device is on.
3. Source (S): The terminal through which the current enters the MOSFET.
The other two pins are usually not utilized for standard connections and may be related to package design or internal features.
This MOSFET is characterized by low on-resistance (RDS(on)) and is suitable for various applications, including power conversion and motor control. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Manufacturer
The IPB65R095C7 is manufactured by Infineon Technologies, a German semiconductor manufacturer. Founded in 1999, Infineon specializes in providing a wide range of semiconductor solutions that are integral to various applications, including automotive, industrial power control, and consumer electronics. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, playing a crucial role in enabling energy efficiency, mobility, and security in electronic systems. Infineon's products are widely used in applications such as electric vehicles, renewable energy systems, and smart devices, reflecting its commitment to advancing technology in a sustainable manner.
Application
The IPB65R095C7 is a high-performance N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Power Supplies: Used in DC-DC converters and switch-mode power supplies for efficient power management.
2. Motor Control: Suitable for driving electric motors in industrial applications and automotive systems.
3. Inverters: Utilized in renewable energy systems, such as solar inverters and UPS systems.
4. Battery Management: Employed in battery charging and management systems to enhance efficiency.
5. LED Drivers: Used in LED lighting applications for efficient current regulation.
Overall, it is favored for its low on-resistance and high-speed switching capabilities.
1. Power Supplies: Used in DC-DC converters and switch-mode power supplies for efficient power management.
2. Motor Control: Suitable for driving electric motors in industrial applications and automotive systems.
3. Inverters: Utilized in renewable energy systems, such as solar inverters and UPS systems.
4. Battery Management: Employed in battery charging and management systems to enhance efficiency.
5. LED Drivers: Used in LED lighting applications for efficient current regulation.
Overall, it is favored for its low on-resistance and high-speed switching capabilities.
Package
The IPB65R095C7 is packaged in a TO-247 package type. This package is designed for high-power applications, featuring a robust construction that allows for efficient heat dissipation.
