Images are for reference only
IPG20N06S415ATMA2
+BOMMOSFET 2N-CH 8TDSON
-
ManufacturerInfineon Technologies
-
Mfr. Part #IPG20N06S415ATMA2
-
Datasheet IPG20N06S415ATMA2 DataSheet
-
Package VDFN-8
-
In Stock8383
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 20A |
| Rds On(Max) @ Id Vgs | 15.5mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 20µA |
| Gate Charge(Qg)(Max) @ Vgs | 29nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 2260pF @ 25V |
| Power - Max | 50W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |