IRF2804LPBF

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IRF2804LPBF

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IRF2804 - 12V-300V N-CHANNEL POW

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 75A (Tc)
Rds On(Max) @ Id Vgs 2.3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 240 nC @ 10 V
Input Capacitance(Ciss)(Max) @ Vds 6450 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262

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