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IRFB3077PBF
+BOMIRFB3077 - 12V-300V N-CHANNEL PO
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ManufacturerInternational Rectifier
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Mfr. Part #IRFB3077PBF
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Datasheet IRFB3077PBF DataSheet
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Package TO220
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In Stock4658
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Specifications
| Attribute | Value |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.3mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 220 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 9400 pF @ 50 V |
| PowerDissipation(Max) | 370W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Overview
Description
The IRFB3077PBF is a power MOSFET transistor manufactured by Infineon Technologies, designed for high-efficiency switching applications. It features advanced technology for improved performance and reliability, making it suitable for various applications in power management. The transistor is part of the HEXFET series, known for its low on-state resistance and fast switching capabilities. It can handle high current and voltage levels, making it ideal for use in power supplies, motor drives, and other industrial and consumer electronics where efficient power conversion is necessary.
Key specifications include a maximum drain-source voltage (V_ds) of 75V and a continuous drain current (I_d) of 210A, allowing it to handle substantial power. With a low gate charge, it offers excellent switching performance, minimizing energy loss during operation. The transistor also features rugged construction to withstand harsh environments and high temperatures, enhancing its durability and lifespan. The IRFB3077PBF comes in a standard TO-220 package, facilitating easy integration into electronic circuits. Overall, it is a robust choice for applications requiring efficient, high-power switching.
Key specifications include a maximum drain-source voltage (V_ds) of 75V and a continuous drain current (I_d) of 210A, allowing it to handle substantial power. With a low gate charge, it offers excellent switching performance, minimizing energy loss during operation. The transistor also features rugged construction to withstand harsh environments and high temperatures, enhancing its durability and lifespan. The IRFB3077PBF comes in a standard TO-220 package, facilitating easy integration into electronic circuits. Overall, it is a robust choice for applications requiring efficient, high-power switching.
Equivalent
The IRFB3077PBF is a N-channel MOSFET known for its high efficiency and low on-resistance. Equivalent products include:
1. STP60NF06 from STMicroelectronics
2. IPP60R099P7 from Infineon Technologies
3. FDP047N10 from ON Semiconductor
4. AOT460 from Alpha & Omega Semiconductor
These equivalents are similar in terms of voltage and current ratings but check the datasheets for specific parameters to ensure compatibility.
1. STP60NF06 from STMicroelectronics
2. IPP60R099P7 from Infineon Technologies
3. FDP047N10 from ON Semiconductor
4. AOT460 from Alpha & Omega Semiconductor
These equivalents are similar in terms of voltage and current ratings but check the datasheets for specific parameters to ensure compatibility.
Features
The IRFB3077PBF is a power MOSFET designed for high-efficiency performance in various applications. Here are its key features:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 75V and can handle a continuous drain current (I_D) of up to 210A.
2. R_DS(on): It has a low on-resistance (R_DS(on)) of around 4.5 milliohms, ensuring minimal power loss and high efficiency during operation.
3. Package Type: Available in a TO-220 package, offering good thermal performance and ease of mounting.
4. Thermal Resistance: Features low thermal resistance, allowing for efficient heat dissipation and improved reliability under thermal stress.
5. Applications: Ideal for use in motor drives, high-efficiency switching applications, synchronous rectification in power supplies, and other high-current applications.
6. Technology: Based on advanced HEXFET® technology, providing a balance of fast switching speed and ruggedness.
7. Environment: It is lead-free and RoHS compliant, aligning with environmental safety standards.
These characteristics make the IRFB3077PBF suitable for demanding and high-performance electronic applications.
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 75V and can handle a continuous drain current (I_D) of up to 210A.
2. R_DS(on): It has a low on-resistance (R_DS(on)) of around 4.5 milliohms, ensuring minimal power loss and high efficiency during operation.
3. Package Type: Available in a TO-220 package, offering good thermal performance and ease of mounting.
4. Thermal Resistance: Features low thermal resistance, allowing for efficient heat dissipation and improved reliability under thermal stress.
5. Applications: Ideal for use in motor drives, high-efficiency switching applications, synchronous rectification in power supplies, and other high-current applications.
6. Technology: Based on advanced HEXFET® technology, providing a balance of fast switching speed and ruggedness.
7. Environment: It is lead-free and RoHS compliant, aligning with environmental safety standards.
These characteristics make the IRFB3077PBF suitable for demanding and high-performance electronic applications.
Pinout
The IRFB3077PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is typically used in power management applications due to its high efficiency and fast switching capabilities.
The IRFB3077PBF comes in a TO-220 package, which is a common through-hole package for power transistors. This package includes 3 pins, each serving a specific function:
1. Gate (G): This pin is used to control the operation of the MOSFET. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain pin is the terminal through which the main current flows. It is typically connected to the load.
3. Source (S): The source pin is the terminal through which current enters the MOSFET from the circuit. It is usually connected to ground or to the negative side of the power supply in most applications.
These pins allow the MOSFET to function as an electronic switch or amplifier in various circuits.
The IRFB3077PBF comes in a TO-220 package, which is a common through-hole package for power transistors. This package includes 3 pins, each serving a specific function:
1. Gate (G): This pin is used to control the operation of the MOSFET. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain pin is the terminal through which the main current flows. It is typically connected to the load.
3. Source (S): The source pin is the terminal through which current enters the MOSFET from the circuit. It is usually connected to ground or to the negative side of the power supply in most applications.
These pins allow the MOSFET to function as an electronic switch or amplifier in various circuits.
Manufacturer
The IRFB3077PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. The company is known for producing semiconductors used in automotive, industrial, and consumer electronics, as well as power management and security solutions. Infineon acquired International Rectifier, which originally designed and manufactured the IRFB3077PBF, a part of their power MOSFET series. Infineon's product portfolio includes microcontrollers, sensors, power semiconductors, and other semiconductor solutions that are integral to modern electronic devices and systems.
Application
The IRFB3077PBF is a power MOSFET commonly used in applications requiring efficient power management and switching. Its main application areas include:
1. Power Supplies: Used in high-efficiency power supply units, including server and telecom power systems.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. DC-DC Converters: Used in converting voltages for various electronic devices and systems.
4. Uninterruptible Power Supplies (UPS): Provides reliable switching for backup power systems.
5. Renewable Energy Systems: Utilized in solar inverters and other renewable energy converters.
6. LED Drivers: Effective in controlling high-power LED lighting systems.
These applications benefit from its low on-resistance and high-speed switching capabilities.
1. Power Supplies: Used in high-efficiency power supply units, including server and telecom power systems.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. DC-DC Converters: Used in converting voltages for various electronic devices and systems.
4. Uninterruptible Power Supplies (UPS): Provides reliable switching for backup power systems.
5. Renewable Energy Systems: Utilized in solar inverters and other renewable energy converters.
6. LED Drivers: Effective in controlling high-power LED lighting systems.
These applications benefit from its low on-resistance and high-speed switching capabilities.
Package
The IRFB3077PBF is a TO-220 package type, which is commonly used for power transistors and other semiconductor devices. It features a plastic case with three leads, providing a compact and efficient design for heat dissipation and electrical connections.
