IRF7341GTRPBF

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IRF7341GTRPBF

+BOM

MOSFET N-CH 55V 5.1A

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain(Id) @ 25°C 5.1A
Rds On(Max) @ Id Vgs 50mOhm @ 5.1A, 10V
Vgs(th)(Max) @ Id 1V @ 250µA (Min)
Gate Charge(Qg)(Max) @ Vgs 44nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 780pF @ 25V
Power - Max 2.4W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount

Overview

Description

The IRF7341GTRPBF is a dual N-channel and P-channel MOSFET in a compact SO-8 package, designed for power management applications. Key features include:
- Voltage Ratings: 55V (N-channel) / -30V (P-channel)
- Current Ratings: 4.3A (N-channel) / -3.7A (P-channel)
- Low On-Resistance: 85mΩ (N-channel) / 130mΩ (P-channel)
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor drives, and load switching.
Its complementary pair simplifies half-bridge and synchronous buck converter designs. The device is lead-free and RoHS-compliant, making it suitable for modern electronics.
Applications: Power supplies, battery management, and automotive systems.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the IRF7341GTRPBF (dual N+P-channel MOSFET) include:
- FDS6898A (Fairchild)
- Si4925DY (Vishay)
- DMN2019LSN (Diodes Inc.)
- NTTFS4C10N (ON Semiconductor)
These alternatives offer similar specifications (30V, ~3A) in a SOIC-8 package. Verify exact parameters (RDS(on), VGS) for compatibility.

Features

The IRF7341GTRPBF is a dual N- and P-channel MOSFET in a compact SO-8 package. Key features:
- Voltage Ratings: 55V (N-channel) / -55V (P-channel).
- Current Ratings: 4.3A (N-channel) / -3.7A (P-channel).
- Low On-Resistance: 85mΩ (N-channel, Vgs=10V) / 140mΩ (P-channel, Vgs=-10V).
- Fast Switching: Optimized for high-efficiency power applications.
- Logic-Level Gate Drive: Compatible with 5V/10V drive (N/P-channel).
- Low Gate Charge: Enhances switching performance.
- AEC-Q101 Qualified: Suitable for automotive applications.
- Pb-Free & RoHS Compliant.
Ideal for DC-DC converters, motor control, and power management.

Pinout

The IRF7341GTRPBF is a dual N-channel and P-channel MOSFET in an 8-pin SOIC package.
Pin Count: 8 pins.
Functions:
- Pins 1, 3, 5, 7 (D1, S1, S2, D2): Drain and source connections for the two MOSFETs.
- Pins 2, 4 (G1, G2): Gate inputs for the N-channel and P-channel MOSFETs.
- Pins 6, 8 (NC): No connection (unused).
This device integrates a 30V N-channel and a -30V P-channel MOSFET, commonly used for power switching in applications like motor control and DC-DC converters.

Application

The IRF7341GTRPBF, a dual N- and P-channel MOSFET, is commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits for small motors.
3. Load Switching – Efficient power switching in portable devices.
4. Battery Protection – Reverse polarity and overcurrent protection.
5. Automotive Systems – LED drivers, infotainment power control.
Its compact SO-8 package and low on-resistance make it suitable for space-constrained, high-efficiency applications.

Package

The IRF7341GTRPBF is a dual N- and P-channel MOSFET in a SOIC-8 package. This surface-mount package is compact, suitable for high-density PCB designs, and features eight pins. It’s commonly used in power management applications due to its efficient thermal performance and small footprint.

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