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IRF7380TRPBF
+BOMMOSFET 2N-CH 80V 3.6A 8-SOIC
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ManufacturerInfineon Technologies
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Mfr. Part #IRF7380TRPBF
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Datasheet IRF7380TRPBF DataSheet
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Package SOIC-8
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In Stock4277
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 80V |
| Current-ContinuousDrain(Id)@25°C | 3.6A |
| RdsOn(Max)@IdVgs | 73mOhm @ 2.2A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 660pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
Key features of the IRF7380TRPBF include a low on-state resistance, which minimizes power loss and heat generation during operation, and a high-speed switching capability that enhances performance in dynamic applications. The MOSFET operates with a maximum drain-source voltage (V_ds) of 75V and a continuous drain current (I_d) of up to 55A, making it suitable for medium to high power applications.
The IRF7380TRPBF is often deployed in power converters, motor drive circuits, and other applications where efficient switching is critical. It comes in a standard TO-220 package, which is widely accepted in the industry for its balance of thermal performance and size. Overall, the IRF7380TRPBF is valued for its robustness, efficiency, and versatility in power electronic designs.
Equivalent
1. STMicroelectronics STL150N3LLH6 - Offers similar voltage and current ratings.
2. ON Semiconductor NTD5867NL - Comparable specifications and performance.
3. Vishay SiR422DP - Provides similar electrical characteristics.
4. Toshiba TPHR8504PL - Functions effectively in similar circuit conditions.
Always verify the specific parameters and ensure they meet your application requirements before substituting.
Features
1. Voltage and Current Ratings: It typically handles a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of approximately 76A, making it suitable for power-intensive applications.
2. Package Type: This MOSFET is available in a D-Pak (TO-252) surface-mount package, which aids in efficient heat dissipation and compact circuit design.
3. Low On-Resistance: It features a low R_ds(on) value, contributing to minimal power loss and improved efficiency in power conversion and switching applications.
4. Fast Switching: The device is designed for fast switching speeds, which enhances performance in applications such as DC-DC converters and motor control.
5. Thermal Performance: The package provides good thermal conductivity, which helps maintain performance under high-power conditions.
6. Environmentally Friendly: It is lead-free and RoHS compliant, aligning with environmental safety and sustainability standards.
These features make the IRF7380TRPBF a suitable choice for applications requiring efficient power management and high-speed switching.
Pinout
1. Gate (G) - Controls the MOSFET's conduction state.
2. Drain (D) - Current flows from drain to source when the MOSFET is on.
3. Source (S) - Forms the return path for the current.
In an SO-8 package, each MOSFET has 3 primary functional pins: Gate, Drain, and Source. Additionally, the MOSFETs share some pins for thermal and electrical connectivity. The IRF7380TRPBF is used in applications requiring efficient power management, such as DC-DC converters and load switches.
Manufacturer
Application
1. Power Supply Circuits: Used in DC-DC converters and switch-mode power supplies for efficient power conversion.
2. Motor Control: Utilized in motor drivers for speed and torque control in industrial and automotive applications.
3. Load Switching: Suitable for switching loads in battery-operated devices owing to its low on-resistance.
4. Solar Inverters: Applied in solar power systems to manage energy flow efficiently.
5. Uninterruptible Power Supplies (UPS): Integral for ensuring reliable power backup by managing battery systems.
Its high efficiency and thermal performance make it ideal for these applications.