IRF7910PBF

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IRF7910PBF

+BOM

MOSFET 2N-CH 12V 10A 8-SOIC

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Specifications

Attribute Value
Supplier Infineon Technologies
Package / Case Tube
Series HEXFET®
Part Status Discontinued at Digi-Key
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain(Id) @ 25°C 10A
Rds On(Max) @ Id Vgs 15mOhm @ 8A, 4.5V
Vgs(th)(Max) @ Id 2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 26nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 1730pF @ 6V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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