IRFH8337TRPBF

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IRFH8337TRPBF

+BOM

MOSFET N-CH 30V 12A/35A PQFN

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 12A (Ta), 35A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 12.8mOhm @ 16.2A, 10V
Vgs(th)(Max) @ Id 2.35V @ 25µA
Gate Charge(Qg)(Max) @ Vgs 10 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 790 pF @ 10 V
Power Dissipation (Max) 3.2W (Ta), 27W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PQFN (5x6)

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