IRFI640GPBF

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IRFI640GPBF

+BOM

MOSFET N-CH 200V 9.8A TO220-3

  • ManufacturerVishay Siliconix

  • Mfr. Part #IRFI640GPBF

  • In Stock3862

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Specifications

Attribute Value
Part Status Active
Base Product Number IRFI640
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3 Full Pack, Isolated Tab
Packaging Tube

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