IRFS3607PBF

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IRFS3607PBF

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IRFS3607 - 12V-300V N-CHANNEL PO

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain(Id) @ 25°C 80A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 9mOhm @ 46A, 10V
Vgs(th)(Max) @ Id 4V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 84 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3070 pF @ 50 V
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK

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