IRFU4510PBF

Images are for reference only

IRFU4510PBF

+BOM

MOSFET N-CH 100V 56A IPAK

365 Days Quality Guarantee

7*24 hours service quarantee

90-day after-sales guarantee

Genuine Product Guarantee

Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 56A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 13.9mOhm @ 38A, 10V
Vgs(th)(Max) @ Id 4V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 81 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3031 pF @ 50 V
Power Dissipation (Max) 143W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251AA)