MRF150

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MRF150

+BOM

RF MOSFET 50V 211-11

  • ManufacturerMACOM Technology Solutions

  • Mfr. Part #MRF150

  • Datasheet MRF150 DataSheet

  • In Stock6865

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Specifications

Attribute Value
Part Status Active
Technology MOSFET (Metal Oxide)
Configuration N-Channel
Frequency 30MHz ~ 150MHz
Gain 8dB ~ 17dB
Voltage - Test 50 V
Current Rating (Amps) 16A
Current - Test 250 mA
Power - Output 150W
Voltage - Rated 125 V
Package 211-11, Style 2
Supplier Device Package 211-11, Style 2
Packaging Tray

Overview

Features

The MRF150 is a high-power RF transistor designed for VHF/UHF applications. Key features include:
- Frequency Range: 30–175 MHz
- Output Power: 150 W (typical at 175 MHz, 28V)
- Gain: 10 dB (typical at 175 MHz)
- Efficiency: 60% (typical)
- Voltage Rating: 28V (max)
- Package: SOT-502A (TO-270AA)
- Applications: RF amplifiers in industrial, broadcast, and military systems
It offers rugged performance, high thermal stability, and is optimized for linear and Class AB/C operation.

Pinout

The MRF150 is an RF power transistor with 4 pins (base, emitter, collector, and case ground).
### Pin Functions:
1. Base (Input) – RF signal input.
2. Emitter (Ground) – Connected to ground for biasing.
3. Collector (Output) – RF power output.
4. Case (Ground/Floating) – Typically grounded for heat dissipation and shielding.
### Key Features:
- Frequency Range: Up to 150 MHz.
- Power Output: ~150W (depends on configuration).
- Package: TO-247 or similar, with a metal flange for heatsinking.
Used in RF amplifiers, transmitters, and industrial applications.

Application

The MRF150 is a high-power RF transistor primarily used in:
1. RF Amplifiers – Boosts signals in communication systems.
2. Broadcast Transmitters – Enhances TV and radio transmission.
3. Industrial Heating – Powers RF heating and plasma applications.
4. Military & Aerospace – Supports radar and secure communication.
5. Amateur Radio – Used in high-power ham radio setups.
Its high-frequency (up to 150 MHz) and rugged design make it ideal for demanding RF applications.

Package

The MRF150 is a high-power RF transistor typically packaged in a TO-39 metal can. This package offers excellent thermal performance and shielding, making it suitable for high-frequency applications like amplifiers. The TO-39 is a through-hole package with a metal casing for durability and heat dissipation.

Frequently Asked Questions


Q: What is the typical power output of the MRF150 at 50V test voltage?
A: The MRF150 is capable of delivering 150W of RF power output under specified test conditions.


Q: What frequency range does this MOSFET support?
A: It operates efficiently from 30 MHz to 150 MHz, making it suitable for HF and VHF applications.


Q: Is the MRF150 an N-Channel or P-Channel device?
A: It is an N-Channel enhancement-mode MOSFET, optimized for RF power amplification.


Q: What is the required bias current for typical operation?
A: The recommended test bias current is 250 mA to achieve specified gain and linearity.


Q: Can this device handle continuous 16A drain current?
A: Yes, it is rated for 16A continuous current, with a maximum drain-source voltage of 125V.


Q: What package type does the MRF150 come in?
A: It uses the 211-11, Style 2 package, designed for high-power RF circuit mounting.


Q: What is the typical gain range for this RF transistor?
A: The typical gain is between 8 dB and 17 dB, depending on frequency and operating conditions.


Q: Is this product lead-free and RoHS compliant?
A: RoHS status is not specified; please verify with the manufacturer or datasheet for compliance details.


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